Panasonic 2SA0720A User Manual

Transistors

1

Publication date: March 2003

SJC00003BED

(2SA720A)

Silicon PNP epitaxial planar type

For low-frequency driver amplification

Complementary to 2SC1318A

■ Features

• High collector-emitter voltage (Base open) V

CEO

• Optimum for the driver stage of a low-frequency and 25 W to 30

W output amplifier

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

−80

V

Collector-emitter voltage (Base open)

V

CEO

−70

V

Emitter-base voltage (Collector open)

V

EBO

−5

V

Collector current

I

C

− 0.5

A

Peak collector current

I

CP

−1

A

Collector power dissipation

P

C

625

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

= −10 µA, I

E

 

= 0

−80

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

= −2 mA, I

B

 

= 0

−70

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

= −10 µA, I

C

 

= 0

−5

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

= −20 V, I

E

 

= 0

− 0.1

µA

Forward current transfer ratio 

*1

h

FE1

 

*2

V

CE

 

= −10 V, I

C

 

= −150 mA

85

240



h

FE2

V

CE

 

= −10 V, I

C

 

= −500 mA

40



Collector-emitter saturation voltage 

*1

V

CE(sat)

I

C

 

= −300 mA, I

B

 

= −30 mA

− 0.2

− 0.6

V

Base-emitter saturation voltage 

*1

V

BE(sat)

I

C

 

= −300 mA, I

B

 

= −30 mA

− 0.85 −1.50

V

Transition frequency

f

T

V

CB

 

= −10 V, I

E

 

= 50 mA, f = 200 MHz

120

MHz

Collector output capacitance

C

ob

V

CB

 

= −10 V, I

E

 

= 0, f = 1 MHz

20

30

pF

(Common base, input open circuited)

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

5.0

±0.2

0.7

±0.1

0.45

+0.15

–0.1

2.5

+0.6

–0.2

0.45

+0.15

–0.1

2.5

1

2 3

+0.6

–0.2

4.0

±0.2

5.1

±

0.2

12.9

±

0.5

2.3

±

0.2

0.7

±

0.2

Rank

Q

R

h

FE1

85 to 170

120 to 240

Unit: mm

1: Emitter
2: Collector
3: Base

EIAJ: SC-43A

TO-92-B1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurment

*2: Rank classification

Note) The part number in the parenthesis shows conventional part number.

This product complies with the RoHS Directive (EU 2002/95/EC).