Panasonic 2SC4627G User Manual

1

Transistors

Publication date: June 2007

SJC00391AED

This product complies with the RoHS Directive (EU 2002/95/EC).

Silicon NPN epitaxial planar type

For high-frequency amplification

■ Features

• Optimum for RF amplification of FM/AM radios
• High transition frequency f

T

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

30

V

Collector-emitter voltage (Base open)

V

CEO

20

V

Emitter-base voltage (Collector open)

V

EBO

3

V

Collector current

I

C

15

mA

Collector power dissipation

P

C

125

mW

Junction temperature

T

j

125

°C

Storage temperature

T

stg

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

= 10 µA, I

E

 

=  0

30

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

= 10 µA, I

C

 

=  0

3

V

Base-emitter voltage

V

BE

V

CB

 

= 6 V, I

E

 

= −1 mA

720

mV

Forward current transfer ratio 

*

h

FE

V

CB

 

= 6 V, I

E

 

= −1 mA

65

160



Transition frequency

f

T

V

CB

 

= 6 V, I

E

 

= −1 mA, f = 200 MHz

450

650

MHz

Reverse transfer capacitance

C

re

V

CB

 

= 6 V, I

E

 

= −1 mA, f = 10.7 MHz

0.8

1.0

pF

(Common emitter)

Power gain

PG

V

CB

 

= 6 V, I

E

 

= −1 mA, f = 100 MHz

24

dB

Noise figure

NF

V

CB

 

= 6 V, I

E

 

= −1 mA, f = 100 MHz

3.3

dB

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Rank

C

h

FE

65 to 160

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

■ Package

• Code

SSMini3-F3

• Marking Symbol: U
• Pin Name

1. Base
2. Emitter
3. Collector