Panasonic 2SA2078 User Manual

Transistors

1

Publication date: August 2003

SJC00302AED

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SC5846

■ Features

• High forward current transfer ratio h

FE

• SSS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-
zine packing.

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

−60

V

Collector-emitter voltage (Base open)

V

CEO

−50

V

Emitter-base voltage (Collector open)

V

EBO

−7

V

Collector current

I

C

−100

mA

Peak collector current

I

CP

−200

mA

Collector power dissipation

P

C

100

mW

Junction temperature

T

j

125

°C

Storage temperature

T

stg

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

= −10 µA, I

E

 

= 0

−60

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

= −100 µA, I

B

 

= 0

−50

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

= −10 µA, I

C

 

= 0

−7

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

= −20 V, I

E

 

= 0

− 0.1

µA

Collector-emitter cutoff current (Base open)

I

CEO

V

CE

 

= −10 V, I

B

 

= 0

−100

µA

Forward current transfer ratio

h

FE

V

CE

 

= −10 V, I

C

 

= −2 mA

180

390



Collector-emitter saturation voltage

V

CE(sat)

I

C

 

= −100 mA, I

B

 

= −10 mA

− 0.2

− 0.5

V

Transition frequency

f

T

V

CB

 

= −10 V, I

E

 

= 1 mA, f = 200 MHz

80

MHz

Collector output capacitance

C

ob

V

CB

 

= −10 V, I

E

 

= 0, f = 1 MHz

2.2

pF

(Common base, input open circuited)

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

1.20

±

0.05

0.52

±

0.03

0 to 0.01

0.15 max.

5˚

0.15 min.

0.80

±

0.05

0.15 min.

0.33

(0.40)

(0.40)

1

2

3

5˚

0.80

±0.05

1.20

±0.05

+0.05

–0.02

0.10

+0.05

–0.02

0.23

+0.05

–0.02

Unit: mm

Marking Symbol: 7H

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

1 : Base
2 : Emitter
3 : Collector

SSSMini3-F1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).