Panasonic 2SA1748 User Manual

Transistors

1

Publication date: March 2003

SJC00028BED

Silicon PNP epitaxial planar type

For high-frequency amplification

Complementary to 2SC4562

■ Features

• High transition frequency f

T

• Small collector output capacitance C

ob

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing.

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

−50

V

Collector-emitter voltage (Base open)

V

CEO

−50

V

Emitter-base voltage (Collector open)

V

EBO

−5

V

Collector current

I

C

−50

mA

Collector power dissipation

P

C

150

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

= −10 µA, I

E

 

= 0

−50

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

= −1 mA, I

B

 

= 0

−50

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

= −10 µA, I

C

 

= 0

−5

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

= −10 V, I

E

 

= 0

− 0.1

µA

Collector-emitter cutoff current (Base open)

I

CEO

V

CE

 

= −10 V, I

B

 

= 0

−100

µA

Forward current transfer ratio 

 

*

h

FE

V

CE

 = 

−10 V, I

C

 = 

−2 mA

200

500



Collector-emitter saturation voltage

V

CE(sat)

I

C

 

= −10 mA, I

B

 

= −1 mA

− 0.1

− 0.3

V

Transition frequency

f

T

V

CB

 

= −10 V, I

E

 

= 2 mA, f = 200 MHz

250

MHz

Collector output capacitance

C

ob

V

CB

 

= −10 V, I

E

 

= 0, f = 1 MHz

1.5

pF

(Common base, input open circuited)

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Unit: mm

2.1

±

0.1

1.3

±0.1

0.3

+0.1

–0.0

2.0

±0.2

1.25

±

0.10

(0.425)

1

3

2

(0.65) (0.65)

0.2

±

0.1

0.9

±

0.1

0 to 0.1

0.9

+0.2 –0.1

0.15

+0.10

–0.05

5˚

10˚

1: Base
2: Emitter
3: Collector

EIAJ:  SC-70

SMini3-G1 Package

Rank

Q

R

h

FE

200 to 400

250 to 500

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Marking Symbol: AL

This product complies with the RoHS Directive (EU 2002/95/EC).