Panasonic 2SA1791G User Manual
Transistors
1
Publication date: May 2007
SJC00380AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1791G
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4656G
■ Features
• High transition frequency f
T
• Small collector output capacitance C
ob
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−50
V
Collector-emitter voltage (Base open)
V
CEO
−50
V
Emitter-base voltage (Collector open)
V
EBO
−5
V
Collector current
I
C
−50
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= −10 µA, I
E
= 0
−50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= −1 mA, I
B
= 0
−50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= −10 µA, I
C
= 0
−5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −10 V, I
E
= 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −10 V, I
B
= 0
−100
µA
Forward current transfer ratio
*
h
FE
V
CE
=
−10 V, I
C
=
−2 mA
200
500
Collector-emitter saturation voltage
V
CE(sat)
I
C
= −10 mA, I
B
= −1 mA
− 0.1
− 0.3
V
Transition frequency
f
T
V
CB
= −10 V, I
E
= 2 mA, f = 200 MHz
250
MHz
Collector output capacitance
C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz
1.5
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
Q
R
h
FE
200 to 400
250 to 500
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
■ Package
• Code
SSMini3-F3
• Marking Symbol: AL
• Pin Name
• Pin Name
1. Base
2. Emitter
3. Collector
2. Emitter
3. Collector