Panasonic 2SC6037G User Manual

Page of 4
Transistors
1
Publication date: May 2007
SJC00383AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2161G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037G
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings  T
a
 
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−15
V
Collector-emitter voltage (Base open)
V
CEO
−12
V
Emitter-base voltage (Collector open)
V
EBO
−5
V
Collector current
I
C
−500
mA
Peak collector current
I
CP
−1
A
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
 
= −10 µA, I
E
 
= 0
−15
V
Collector-emitter voltage (Base open)
V
CEO
I
C
 
= −1 mA, I
B
 
= 0
−12
V
Emitter-base voltage (Collector open)
V
EBO
I
E
 
= −10 µA, I
C
 
= 0
−5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
 
= −15 V, I
E
 
= 0
− 0.1
µA
Forward current transfer ratio
h
FE
V
CE
 
= −2 V, I
C
 
= −10 mA
270
680
Collector-emitter saturation voltage
V
CE(sat)
I
C
 
= −200 mA, I
B
 
= −10 mA
−250
mV
Transition frequency
f
T
V
CB
 
= −2 V, I
E
 
= 10 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
 
= 10 V, I
E
 
= 0, f = 1 MHz
4.5
pF
(Common base, input open circuited)
■ Electrical Characteristics  T
a
 
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■ Package
• Code
SSMini3-F3
• Marking Symbol: 2U
• Pin Name
1. Base
2. Emitter
3. Collector