Panasonic 2SC6036 User Manual
Transistors
Publication date : December 2004
SJC00324AED
1
2SC6036
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2162
Complementary to 2SA2162
Features
Low collector-emitter saturation voltage V
CE(sat)
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
12
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
500
mA
Peak collector current
I
CP
1
A
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–55 to +125
°
C
Electrical Characteristics T
a
= 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 µA, I
E
= 0
15
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
12
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 µA, I
C
= 0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
0.1
µ
A
Forward current transfer ratio
h
FE
V
CE
= 2 V, I
C
= 10 mA
270
680
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 200 mA, I
B
= 10 mA
250
mV
Transition frequency
f
T
V
CB
= 2 V, I
E
= –10 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
(Common base, input open circuited)
C
ob
V
CB
= 10 V, f = 1 MHz
4.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collecter
SSSMini3-F1 Package
1.20
±0.05
0.5
2
±0.03
0 to 0.01
0.15 max.
5°
0.15 min
.
0.80
±0.05
0.15 min.
0.33
(0.40)
(0.40)
1
2
3
5°
0.80
±
0.05
1.20
±
0.05
+
0.05
−
0.02
0.10
+
0.05
−
0.02
0.23
+
0.05
−
0.02
Marking Symbol : 4U
This product complies with the RoHS Directive (EU 2002/95/EC).