Panasonic MAZ9xxxH Series User Manual
Zener Diodes
1
Publication date: November 2005
SKE00008DED
MAZ9xxxH Series
Silicon planar type
For surge absorption circuit
■ Features
• Two elements anode-common type
• Power dissipation P
• Power dissipation P
D
: 200 mW
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Power dissipation
*
P
D
200
mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
■ Common Electrical Characteristics T
a
= 25°C ± 3°C
Note) *: P
D
= 200 mW achieved with a printed circuit board.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Zener voltage
*
V
Z
I
Z
Specified value
V
Zener rise operating resistance
R
ZK
I
Z
Specified value
Ω
Zener operating resistance
R
Z
I
Z
Specified value
Ω
Reverse current
I
R
V
R
Specified value
µA
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Refer to the list of the
electrical characteristics
within part numbers
electrical characteristics
within part numbers
Internal Connection
1
3
2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage:
±10 kV
Test method: IEC1000-4-2 (C
= 150 pF, R = 330 Ω, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
V
Z
guaranted 20 ms after current flow.
1: Cathode 1
2: Cathode 2
3: Anode
2: Cathode 2
3: Anode
EIAJ: SC-59
Mini3-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).