Panasonic MA2J112 (MA112) User Manual
Switching Diodes
1
Publication date: March 2004
SKF00012BED
MA2J112
(MA112)
Silicon epitaxial planar type
For switching circuits
■ Features
• Allowing high-density mounting
• Ensuring the forward current (Average) capacity I
• Ensuring the forward current (Average) capacity I
F(AV)
= 200 mA
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
40
V
Maximum peak reverse voltage
V
RM
40
V
Forward current (Average)
*1
I
F(AV)
200
mA
Peak forward current
I
FM
600
mA
Non-repetitive peak forward
I
FSM
1
A
surge current
*2
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 200 mA
1.1
V
Reverse current
I
R1
V
R
= 15 V
50
nA
I
R2
V
R
= 35 V
500
I
R3
V
R
= 35 V, T
a
= 100°C
100
µA
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
4
pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V
10
ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: 1C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse
Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
1: Anode
2: Cathode
EIAJ: SC-76
2: Cathode
EIAJ: SC-76
SMini2-F1 Package
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±
0.2
1.7
±
0.1
0.4
±
0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Note) *1: With a printed-circuit board
*2: t = 1 s
This product complies with the RoHS Directive (EU 2002/95/EC).