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Panasonic MA6X121 (MA121) User Manual

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Switching Diodes
1
Publication date:  March 2004
SKF00051BED
Note) *1: Value for single diode
*2: t 
= 1 s
MA6X121 
(MA121)
Silicon epitaxial planar type
For switching circuit
■ Features
• Three isolated elements contained in one package, allowing high-
density mounting
• Short reverse recovery time t
rr
• Small terminal capacitance C
t
■ Absolute Maximum Ratings  T
a
 
= 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current 
*1
I
F
100
mA
Peak forward current 
*1
I
FM
225
mA
Non-repetitive peak forward
I
FSM
500
mA
surge current 
*1, 2
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
 
= 100 mA
1.2
V
Reverse voltage
V
R
I
R
 
= 100 µA
80
V
Reverse current
I
R
V
R
 
= 75 V
100
nA
Terminal capacitance
C
t
V
R
 
= 0 V, f = 1 MHz
2
pF
Reverse recovery time 
*
t
rr
I
F
 
= 10 mA, V
R
 
= 6 V
3
ns
I
rr
 
= 0.1 I
R 
, R
L
 
= 100 Ω
■ Electrical Characteristics  T
a
 
= 25°C ± 3°C
Marking Symbol: M2D
1: Cathode 1
2: Cathode 2
3: Cathode 3
4: Anode 3
5: Anode 2
6: Anode 1
EIAJ: SC-74
Mini6-G1 Package
6
5
4
1
2
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
 = 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
 = 50 Ω
t
p
 = 2 µs
t
r
 = 0.35 ns
δ = 0.05
I
F
 = 10 mA
V
R
 = 6 V
R
L
 = 100 Ω
10%
Input Pulse
Output Pulse
I
rr
 = 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
2.90
1.9
±0.1
0.16
+0.10
–0.06
2.8
+0.2 –0.3
1.1
+0.3 –0.1
1.1
0 to 0.1
+0.2 –0.1
1.50
(0.65)
0.4
±
0.2
+0.25 –0.05
(0.95)
0.30
+0.10
–0.05
0.50
+0.10
–0.05
(0.95)
6
5
4
1
3
2
+0.20
–0.05
5˚
10˚
Internal Connection
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
 measurement circuit
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).