Panasonic MA3XD21 User Manual

Page of 3
Schottky Barrier Diodes (SBD)
1
Publication date: April 2004
SKH00095CED
MA3XD21
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Forward current (Average) I
F(AV)
 
= 1 A rectification is possible
• Low forward voltage V
F
■ Absolute Maximum Ratings  T
a
 
= 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
15
V
Repetitive peak reverse voltage
V
RRM
15
V
Forward current (Average) 
*1
I
F(AV)
1.0
A
Non-repetitive peak forward
I
FSM
3
A
surge current 
*2
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125
°C
Note) *1: Mounted on an alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
 
= 1 A
0.4
V
Reverse current
I
R
V
R
 
= 6 V
1.5
mA
Terminal capacitance
C
t
V
R
 
= 0 V, f = 1 MHz
180
pF
Reverse recovery time
t
rr
I
F
 
= I
R
 
= 100 mA
12
ns
I
rr
 
= 10 mA, R
L
 
= 100 Ω
■ Electrical Characteristics  T
a
 
= 25°C ± 3°C
Unit: mm
Internal Connection
Marking Symbol: M6F
1
2
3
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 400 MHz.
This product complies with the RoHS Directive (EU 2002/95/EC).