Panasonic MA2J1140G User Manual

Switching Diodes

1

Publication date: November 2007

SKF00093AED

This product complies with the RoHS Directive (EU 2002/95/EC).

Silicon epitaxial planar type

For small power rectification

■ Features

• S-mini type package, allowing high-density mounting
• High reverse voltage V

R

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

= 200 mA

1.2

V

Reverse current

I

R

V

R

 

= 150 V

200

nA

Terminal capacitance

C

t

V

R

 

= 0 V, f = 1 MHz

4.5

pF

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

150

V

Maximum peak reverse voltage

V

RM

150

V

Output current

I

O

200

mA

Repetitive peak forward current

I

FRM

600

mA

Non-repetitive peak forward

I

FSM

1

A

surge current 

*

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Note) *: t 

= l s

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 3 MHz.

■ Package

• Code

SMini2-F3

• Pin Name

1: Anode
2: Cathode

■ Marking Symbol: 1E