Panasonic MA27111 User Manual

Switching Diodes

1

Publication date: November 2003

SKF00066BED

Silicon epitaxial planar type

For high-speed switching circuits

■ Features

• High-density mounting is possible
• Short reverse recovery time t

rr

• Small terminal capacitance C

t

■ Absolute Maximum Ratings  T

a

 = 25°C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

80

V

Maximum peak reverse voltage

V

RM

80

V

Forward current

I

F

100

mA

Peak forward current

I

FM

225

mA

Non-repetitive peak forward

I

FSM

500

mA

surge current 

*

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

■ Electrical Characteristics  T

a

 = 25°C ± 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

= 100 mA

0.95

1.20

V

Reverse voltage

V

R

I

R

 

= 100 µA

80

Reverse current

I

R

V

R

 

= 75 V

100

nA

Terminal capacitance

C

t

V

R

 

= 0 V, f = 1 MHz

0.6

2.0

pF

Reverse recovery time 

*

t

rr

I

F

 

= 10 mA, V

R

 

= 6 V

3

ns

I

rr

 

= 0.1 I

R

 , R

L

 

= 100 Ω

Bias Application Unit N-50BU

90%

Pulse Generator
(PG-10N)
R

s

 = 50 Ω

Wave Form Analyzer
(SAS-8130)
R

i

 = 50 Ω

t

p

 = 2 µs

t

r

 = 0.35 ns

δ = 0.05

I

F

 

= 10 mA

V

R

 

= 6 V

R

L

 

= 100 Ω

10%

Input Pulse

Output Pulse

I

rr

 

= 0.1 I

R

t

r

t

p

t

rr

V

R

I

F

t

t

A

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 10 MHz.

3. *: t

rr

 measurement circuit

1: Anode
2: Cathode

SSSMini2-F2 Package

Marking Symbol: S

5°

5

°

0.27

2

1

1.40

±0.05

0.52

±0.03

1.00

±0.05

0.60

±0.05

0.15 min.

0 to 0.01

0.15 min.

0.15 max.

+0.05

–0.02

0.13

+0.05

–0.02

Note) *: t 

= 1 s

This product complies with the RoHS Directive (EU 2002/95/EC).