Panasonic MA26111 User Manual

Page of 2
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes 
Publication date: May 2005 
SKF00068AED 
1
MA26111
Silicon epitaxial planar type
For switching circuits
 Features
 Allowing high-density mounting

 Short reverse recovery time t
rr
 Short reverse recovery time t
 Short reverse recovery time t
 Small terminal capacitance C
t
 High breakdown voltage: V
R
 High breakdown voltage: V
 High breakdown voltage: V  = 80 V
R
R
 Absolute Maximum Ratings  
T
a
 = 25
aa
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
V
V
80
V
Forward current
I
F
100
mA
Peak forward current
I
FM
225
mA
Non-repetitive peak forward surge current 
*
I
FSM
500
mA
Junction temperature
T
j
TT
125
°
C
Storage temperature
T
stg
TT
–55 to +125
°
C
Note) * : t = 1 s
 Electrical Characteristics  
T
a
 = 25
aa
°
C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
V
V
I
F
 = 100 mA
0.95
1.2
V
Reverse voltage
V
R
V
V
I
R
 = 100 
R
R
µ
A
80
V
Reverse current
I
R
V
R
 = 75 V
R
R
100
nA
Terminal capacitance
C
t
V
R
 = 0, f = 1 MHz
R
R
0.6
2
pF
Reverse recovery time 
*
t
rr
tt
I
F
 = 10 mA, V
R
 = 6 V, I
R
R
rr
 = 0.1 I
rrrr
R
 ,
R
R
R
L
R
R  = 100 
LL
Ω
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
 
2. Absolute frequency of input and output is 100 MHz
 
3. . *: t
rr
 measurement circuit
rr
rr
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
50 Ω
t
p
tt = 2 µs
t
r
0.35 ns
δ = 
0.05
I
F
10 mA
V
R
6 V
R
L
100 Ω
10%
Input Pulse
Output Pulse
I
rr
0.1 I
R
t
r
t
p
tt
t
rr
V
R
I
F
t
t
A
A
Marking Symbol: 1
Unit: mm
1: Anode
2: Cathode 
ML-2-N1 Package
0.60
±0.05
1.00
±0.05
1
2
0.39
+0.01
0.03
0.25
±0.05
0.25
±0.05
0.50
±0.05
0.65
±0.01
1
0.05
±0.03
0.05
±0.03
2
0.01
±0.005