Panasonic MA3SE02 User Manual
Schottky Barrier Diodes (SBD)
1
Publication date: February 2005
SKH00067CED
MA3SE02
Silicon epitaxial planar type
For cellular phone
■ Features
• High-frequency wave detection is possible
• Low forward voltage V
• Low forward voltage V
F
• Small terminal capacitance C
t
■ Absolute Maximum Ratings T
a
= 25°C
Marking Symbol: M6B
■ Electrical Characteristics T
a
= 25°C ± 3°C
Internal Connection
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
= 1 mA
0.40
V
V
F2
I
F
= 35 mA
1.0
Reverse current
I
R
V
R
= 15 V
200
nA
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
1.2
pF
Forward dynamic resistance
r
f
I
F
= 5 mA
9
Ω
1
2
3
1: Anode 1
2: Cathode 2
3: Cathode 1
2: Cathode 2
3: Cathode 1
Anode 2
EIAJ: SC-81
SSMini3-F2 Package
Unit: mm
0.28
±0.05
3
1
2
0.28
±0.05
(0.80)
1.60
+0.05
–0.03
0.12
+0.05
–0.02
0.60
+0.05
–0.03
(0.80)
(0.51)
(0.51)
0 to 0.1
(0.15)
3˚
(0.44)
(0.44)
0.88
(0.375)
+0.05
–0.03
0.80
±
0.05
(0.80)
1.60
±
0.05
3˚
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
20
V
Maximum peak reverse voltage
V
RM
20
V
Forward current
Single
I
F
35
mA
Series
25
Peak forward
Single
I
FM
100
mA
current
Series
70
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
This product complies with the RoHS Directive (EU 2002/95/EC).