Panasonic MA2YF80 User Manual
Fast Recovery Diodes (FRD)
Publication date: October 2006
SKJ00016CED
1
This product complies with RoHS Directive (EU 2002/95/EC).
MA2YF80
Silicon epitaxial planar type
For high speed switching circuits
For strobe light circuits (high voltage rectification)
For strobe light circuits (high voltage rectification)
Features
High repetitive peak reverse voltage V
RRM
Short reverse recovery time t
rr
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
800
V
Non-repetitive peak reverse surge voltage
V
RSM
800
V
Forward current
I
F
200
mA
Non-repetitive peak forward surge current
*
I
FSM
1
A
Junction temperature
T
j
–40 to +150
°
C
Storage temperature
T
stg
–40 to +150
°
C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
a
= 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 200 mA
2.5
V
Reverse current
I
RRM1
V
RRM
= 400 V
1
µ
A
I
RRM2
V
RRM
= 800 V
20
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
2
pF
Reverse recovery time
*
t
rr
I
F
= 100 mA, I
R
= 200 mA
I
rr
= 20 mA, R
L
= 100 Ω
20
45
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ =
0.05
I
F
= I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse
Output Pulse
I
rr
= 0.1 × I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1: Anode
2: Cathode
Mini2-F1 Package
5°
1.6
±
0.1
1
2
0.80
±
0.05
0.55
±
0.1
0.16
+0.1
–0.06
3.
5
±0.
1
2.
6
±0.
1
0.45
±
0.1
5
°
0 to 0.1
0 to 0.
3
0 to 0.
1
Marking Symbol: HB