Panasonic MA2S1010G User Manual

1

Publication date: October 2007

SKF00074AED

Switching Diodes

This product complies with the RoHS Directive (EU 2002/95/EC).

Silicon epitaxial planar type

For switching circuits

■ Features

• High breakdown voltage: V

R

 

= 250 V

• Small terminal capacitance C

t

• Suitable for high-density mounting

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

250

V

Repetitive peak reverse voltage

V

RRM

250

V

Forward current

I

F

100

mA

Peak forward current

I

FM

225

mA

Non-repetitive peak forward

I

FSM

500

mA

surge current 

*

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

= 70 mA

1.2

V

Reverse current

I

R

V

R

 

= 250 V

1.0

µA

Terminal capacitance

C

t

V

R

 

= 0 V, f = 1 MHz

3.0

pF

Reverse recovery time 

*

t

rr

I

F

 

= I

R

 

= 10 mA

60

ns

I

rr

 

= 1 mA , R

L

 

= 100 Ω

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Bias Application Unit N-50BU

90%

Pulse Generator
(PG-10N)
R

s

 = 50 Ω

Wave Form Analyzer
(SAS-8130)
R

i

 = 50 Ω

t

p

 = 2 µs

t

r

 = 0.35 ns

δ = 0.05

I

F

 = I

R

 = 10 mA

R

L

 = 100 Ω

10%

Input Pulse

Output Pulse

I

rr

 = 1 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 20 MHz.

3. *: t

rr

 measurement circuit

Note) *: t 

= 1 s

■ Package

• Code

SSMini2-F4

• Pin Name

1: Anode
2: Cathode

■ Marking Symbol: 1P