Panasonic MA2YJ50 User Manual
Schottky Barrier Diodes (SBD)
Publication date: November 2008
SKH00238AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2YJ50
Silicon epitaxial planar type
For rectification
Features
Forward current (Average) I
F(AV)
= 3.0 A rectification is possible.
Low forward voltage V
F
: 0.55 V (max.)
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
40
V
Forward current (Average)
*1
I
F(AV)
3.0
A
Non-repetitive peak forward surge current
I
FSM
50
*2
A
15
*3
A
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Note) *1: Lead temperature: Tl = 60°C, DC wave on
*2: Rectangle wave 1 cycle (Pulse width = 50 ms, non-repetitive peak current)
*3: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
a
= 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
I
F
= 1.0 A
0.35
0.44
V
V
F2
I
F
= 3.0 A
0.47
0.55
Reverse current
I
R
V
R
= 40 V
40
200
m
A
Terminal capacitance
C
t
V
R
= 10 V, f = 1 MHz
70
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100 W
25
ns
Thermal resistance (j-a)
R
th(j-a)
Mounted on an alumina PC board
110
°
C/W
Mounted on a glass epoxy PC board
160
Thermal resistance (j-l)
R
th(j-l)
60
°
C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ =
0.05
I
F
= I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse
Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Package
Code
Mini2-F1
Pin Name
1: Anode
2: Cathode
2: Cathode
Marking Symbol: 3D