Panasonic MA4SD05X User Manual
Schottky Barrier Diodes (SBD)
Publication date: December 2004
SKH00144AED
1
MA4SD05X
Silicon epitaxial planar type
For high-speed switching circuits
Features
Two isolated elements are contained in one package, allowing high-density
mounting
Optimum for high frequency rectifi cation because of its short reverse recovery
time t
rr
time t
time t
Absolute Maximum Ratings
T
a
= 25
aa
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
45
V
Maximum peak reverse voltage
V
RM
V
V
45
V
Forward current
*1
I
F
100
mA
Peak forward current
*1
I
FM
300
mA
Non-repetitive peak forward surge current
*1, 2
I
FSM
1
A
Junction temperature
T
j
TT
125
°
C
Storage temperature
T
stg
TT
–55 to +125
°
C
Note) *1: Value for single diode
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
aa
°
C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F1
V
V
I
F
= 1 mA
0.27
V
V
F2
V
V
I
F
= 10 mA
0.35
V
F3
V
V
I
F
= 100 mA
0.54
0.60
Reverse current
I
R
V
R
= 40 V
R
R
5
µ
A
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
R
R
12
18
pF
Reverse recovery time
*
t
rr
tt
I
F
= I
R
= 100 mA, I
R
R
rr
= 10 mA
rrrr
R
L
R
R = 100
LL
Ω
2.0
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 250 MHz
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t
rr
measurement circuit
rr
rr
Marking Symbol: M5C
Internal Connection
Unit: mm
1: Anode 1
2: Anode 2
3: Cathode 2
4: Cathode 1
SSMini4-F1 Package
1.6
±
0.05
5°
1.0
±
0.05
1.
15
±0
.0
5
0.
01
±0
.0
1
1.
6
±0
.1
0.25
±
0.05
0.55
±
0.1
0.10
±
0.03
1
2
5°
(0
.2
25
)
(0
.1
5)
4
3
1
2
3
4
This product complies with the RoHS Directive (EU 2002/95/EC).