Panasonic switching diodes ma2z001 User Manual

Page of 2
Switching Diodes
1
Publication date: November 2003
SKF00016BED
MA2Z001
Silicon epitaxial planar type
For switching circuits
■ Features
• High breakdown voltage: V
R
 
= 200 V
• Small terminal capacitance C
t
• Suitable for high-density mounting
■ Absolute Maximum Ratings  T
a
 
= 25°C
1.25
±0.1
0.7
±0.1
2.5
±
0.2
1.7
±
0.1
0.4
±
0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Unit: mm
1 : Anode
2 : Cathode
EIAJ : SC-76
SMini2-F1 Package
Marking Symbol: 1K
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
200
V
Repetitive peak reverse voltage
V
RRM
250
V
Forward current (Average)
I
F(AV)
100
mA
Repetitive peak forward current
I
FRM
225
mA
Non-repetitive peak forward
I
FSM
500
mA
surge current 
*
Junction temperature
T
j
150
°C
Storage temperature
T
stg
−55 to +150
°C
Note) *: t 
= 1 s
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
 
= 100 mA
1.2
V
Reverse current
I
R
V
R
 
= 200 V
1.0
µA
Terminal capacitance
C
t
V
R
 
= 0 V, f = 1 MHz
3.0
pF
Reverse recovery time 
*
t
rr
I
F
 
= I
R
 
= 10 mA
60
ns
I
rr
 
= 1 mA , R
L
 
= 100 Ω
■ Electrical Characteristics T
a
 
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 20 MHz.
3. *: t
rr
 measurement circuit
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
 = 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
 = 50 Ω
t
p
 = 2 µs
t
r
 = 0.35 ns
δ = 0.05
I
F
 
= I
R
 
= 10 mA
R
L
 
= 100 Ω
10%
Input Pulse
Output Pulse
I
rr
 
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
This product complies with the RoHS Directive (EU 2002/95/EC).