Panasonic switching diodes ma4x174 (ma174) User Manual

Page of 3
Switching Diodes
1
Publication date:  March 2004
SKF00046BED
MA4X174 
(MA174)
Silicon planar type
For small power rectification and surge absorption
■ Features
• Two isolated elements contained in one package, allowing high-
density mounting
• High breakdown voltage: V
R
 
= 200 V
■ Absolute Maximum Ratings  T
a
 
= 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
200
V
Repetitive peak reverse voltage
V
RRM
250
V
Non-repetitive peak reverse
V
RSM
300
V
surge voltage
Output current
Single
I
O
100
mA
Double
75
Repetitive peak
Single
I
FRM
225
mA
forward current
Double
170
Non-repetitive peak
Single
I
FSM
500
mA
forward surge current 
*
Double
375
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125
°C
Internal Connection
Note) *: t = 1 s
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
 = 100 mA
1.3
V
Reverse current
I
R
V
R
 = 200 V
1.0
µA
■ Electrical Characteristics  T
a
 
= 25°C ± 3°C
4
1
3
2
Marking Symbol: M2O
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
10˚
0.60
+0.10
–0.05
0.40
+0.10
–0.05
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1.50
+0.25 –0.05
2.8
+0.2 –0.3
1.9
±0.2
(0.65)
(0.2)
(0.95)
(0.95)
0 to 0.1
3
4
2
1
0.5R
Note) The part number in the parenthesis shows conventional part number.
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
EIAJ: SC-61
Mini4-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).