Panasonic transistors 2sc3938g User Manual

Transistors

1

Publication date: April 2007

SJC00364AED

This product complies with the RoHS Directive (EU 2002/95/EC).

Silicon NPN epitaxial planar type

For high-speed switching

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

■ Absolute Maximum Ratings  T

a

 

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

= 40 V, I

E

 

= 0

0.1

µA

Emitter-base cutoff current (Collector open)

I

EBO

V

EB

 

= 4 V, I

C

 

= 0

0.1

µA

Forward current transfer ratio 

*

h

FE

V

CE

 

= 1 V, I

C

 

= 10 mA

60

200



Collector-emitter saturation voltage

V

CE(sat)

I

C

 

= 10 mA, I

B

 

= 1 mA

0.17

0.25

V

Base-emitter saturation voltage

V

BE(sat)

I

C

 

= 10 mA, I

B

 

= 1 mA

1

V

Transition frequency

f

T

V

CB

 

= 10 V, I

E

 

= −10 mA, f = 200 MHz

450

MHz

Collector output capacitance

C

ob

V

CB

 

= 10 V, I

E

 

= 0, f = 1 MHz

2

6

pF

(Common base, input open circuited)

Turn-on time

t

on

Refer to the measurement circuit

17

ns

Turn-off time

t

off

17

ns

Storage time

t

stg

10

ns

■ Electrical Characteristics  T

a

 

= 25°C ± 3°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

40

V

Collector-emitter voltage (E-B short)

V

CES

40

V

Emitter-base voltage (Collector open)

V

EBO

5

V

Collector current

I

C

100

mA

Peak collector current

I

CP

300

mA

Collector power dissipation

P

C

150

mW

Junction temperature

T

j

150

°C

Storage temperature

T

stg

−55 to +150

°C

Rank

Q

R

h

FE

60 to 120

90 to 200

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

■ Package

• Code

SMini3-F2

• Marking Symbol: 2Y
• Pin Name

1. Base
2. Emitter
3. Collector