Panasonic transistors 2sb1462j User Manual
Transistors
1
Publication date: June 2007
SJC00087CED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1462J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD2216J
■ Features
• High forward current transfer ratio h
FE
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−60
V
Collector-emitter voltage (Base open)
V
CEO
−50
V
Emitter-base voltage (Collector open)
V
EBO
−7
V
Collector current
I
C
−100
mA
Peak collector current
I
CP
−200
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
°C
Storage temperature
T
stg
−55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= −10 µA, I
E
= 0
−60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= −100 µA, I
B
= 0
−50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= −10 µA, I
C
= 0
−7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= −20 V, I
E
= 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= −10 V, I
E
= 0
−100
µA
Forward current transfer ratio
h
FE
V
CE
= −10 V, I
C
= −2 mA
160
460
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= −100 mA, I
B
= −10 mA
− 0.3
− 0.5
V
Transition frequency
f
T
V
CB
= −10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz
2.7
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.27
±0.02
3
1
2
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Unit: mm
Marking Symbol: A