Panasonic transistors 2sb1030a User Manual
Transistors
Publication date : October 2008
SJC00418AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1030A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SD1423A
Complementary to 2SD1423A
Features
Optimum for high-density mounting
Allowing supply with the radial taping
Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
–60
V
Collector-emitter voltage (Base open)
V
CEO
–50
V
Emitter-base voltage (Collector open)
V
EBO
–7
V
Collector current
I
C
– 0.5
A
Peak collector current
I
CP
–1
A
Collector power dissipation
P
C
300
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Electrical Characteristics T
a
= 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= –10 mA, I
E
= 0
–60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= –2 mA, I
B
= 0
–50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= –10 mA, I
C
= 0
–7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= –20 V, I
E
= 0
– 0.1
m
A
Collector-Emitter cutoff current (Base open)
I
CEO
V
CE
= –20 V, I
B
= 0
–1
m
A
Forward current transfer ratio
h
FE1
*
V
CE
= –10 V, I
C
= –150 mA
85
340
h
FE2
V
CE
= –10 V, I
C
= –500 A
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
= –300 mA, I
B
= –30 mA
– 0.35
– 0.60
V
Transition frequency
f
T
V
CB
= –10 V, I
E
= 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
(Common base, input open circuited)
(Common base, input open circuited)
C
ob
V
CB
= –10 V, I
E
= 0, f = 1 MHz
3.5
15.0
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Package
Code
NS-B1
Pin Name
1. Emitter
2. Collector
3. Base
2. Collector
3. Base