Panasonic UP05C8B User Manual
UP05C8B
2
SJJ00333AED
Electrical Characteristics T
a
= 25°C±3°C
Tr
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 mA, I
E
= 0
30
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 mA, I
C
= 0
3
V
Base-emitter voltage
V
BE
V
CE
= 6 V, I
C
= 1 mA
720
mV
Forward current transfer ratio
h
FE
V
CE
= 6 V, I
C
= 1 mA
65
160
Reverse transfer capacitance
(Common emitter)
(Common emitter)
C
re
V
CB
= 6 V, I
E
= -1 mA, f = 10.7 MHz
0.8
pF
Transition frequency
f
T
V
CB
= 6 V, I
E
= -1 mA, f = 200 MHz
640
MHz
Noise figure
NF
V
CB
= 6 V, I
E
= -1 mA, f = 100 MHz
3.3
dB
Power gain
G
P
V
CB
= 6 V, I
E
= -1 mA, f = 100 MHz
24
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
CCD Load Device
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Pinchi off current
I
P
V
DS
= 10 V, V
G
= 0
3.5
5.5
mA
Output impedance
Z
O
V
DS
= 10 V, V
G
= 0
0.05
MW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
P
T
T
a
Common characteristics chart
0
40
80
120
0
140
120
100
80
40
20
60
To
tal power dissipation
P
T
(
mW
)
Ambient temperature T
a
(°C)
UN05C8B_P
T
-T
a