Epson S1F70000 User Manual

Page of 243
6–2
EPSON
S1F70000 Series
Technical Manual
Appendix
Symbol
Parameter
I
OPR2
Stabilization circuit power dissipation
I
Q
Quiescent current
I
R
Reverse current
I
SWQ
Switching transistor leakage current
K
I
Output voltage temperature gradient
P
D
Power dissipation
P
eff
Voltage multiplication efficiency
R
BSON
Backup switch ON resistance
R
L
Load resistance
R
O
Output impedance
R
ON
ON resistance
R
OSC
Oscillator network resistor
R
RV
Stabilization voltage sensing resistor
R
RVn
Reference voltage
R
SAT
Stabilization output saturation resistance
R
SWON
Switching transistor ON resistance
T
a
Ambient temperature
t
AE
Minimum pulsewidth
t
HA
Address hold time
t
HD
Data hold time
THD
Total harmonic distortion
θ
jn
Thermal resistance
t
MRR
Memory reset recovery time
Symbol
Parameter
C
D
Drain capacitance
C
F8
Field slew capacitance
C
G
Gate capacitance
C
I
Input capacitance
C
n
Capacitance
CT
Crosstalk
C
Tn
Temperature gradient
f
CLK
Clock frequency
f
max
Maximum clock frequency
f
OSC
Oscillator frequency
FT
Field through (channel OFF)
I
BSQ
Backup switching leakage current
I
DDO
Operating current
I
DDS
Standby current
I
DD
Power supply current
I
IH
High-level input current
I
IL
Low-level input current
I
LKI
input leakage current
I
MAX
Maximum current
I
O
Output current
I
OH
High-level output current
I
OL
Low-level output current
I
OPR1
Multiplier circuit power dissipation
The following figure shows a thermal design
model which can be used to determine heatsink
capacity.
2. Ensure that the regulator common pin is a sin-
gle-point ground to prevent earth loops. Make
ground lines as thick and short as possible. Use the
specified bypass capacitors for inputs and outputs.
If there is a switching load, use a tantalum or
ceramic capacitor, as these devices have a high
frequency response between the power supply and
ground.
Junction
temperature
Case
temperature
Heatsink
temperature
Ambient
temperature
Heat
source
T
j
T
c
T
s
T
a
θ
jc
θ
cs
θ
sa
PARAMETER SUMMARY