Nxp Semiconductors PBLS4004D User Manual
PBLS4004D_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 6 January 2009
6 of 15
NXP Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
7.
Characteristics
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4.
TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
values
006aaa464
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−
5
10
10
−
2
10
−
4
10
2
10
−
1
t
p
(s)
10
−
3
10
3
1
0.75
0.5
0.33
0.2
0.33
0.2
0.1
δ
= 1
0.05
0.02
0.01
0
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
TR1; PNP low V
CEsat
transistor
I
CBO
collector-base cut-off
current
current
V
CB
=
−
40 V; I
E
= 0 A
-
-
−
0.1
µ
A
V
CB
=
−
40 V; I
E
= 0 A;
T
j
= 150
°
C
-
-
−
50
µ
A
I
CES
collector-emitter
cut-off current
cut-off current
V
CE
=
−
30 V; V
BE
= 0 V
-
-
−
0.1
µ
A
I
EBO
emitter-base cut-off
current
current
V
EB
=
−
5 V; I
C
= 0 A
-
-
−
0.1
µ
A
h
FE
DC current gain
V
CE
=
−
5 V; I
C
=
−
1 mA
300
-
-
V
CE
=
−
5 V; I
C
=
−
100 mA
300
-
800
V
CE
=
−
5 V; I
C
=
−
500 mA
215
-
-
V
CE
=
−
5 V; I
C
=
−
1 A
150
-
-
V
CEsat
collector-emitter
saturation voltage
saturation voltage
I
C
=
−
100 mA; I
B
=
−
1 mA
-
−
80
−
140
mV
I
C
=
−
500 mA; I
B
=
−
50 mA
-
−
120
−
170
mV
I
C
=
−
1 A; I
B
=
−
100 mA
-
−
220
−
310
mV
R
CEsat
collector-emitter
saturation resistance
saturation resistance
I
C
=
−
500 mA; I
B
=
−
50 mA
-
240
340
m
Ω
V
BEsat
base-emitter
saturation voltage
saturation voltage
I
C
=
−
1 A; I
B
=
−
50 mA
-
-
−
1.1
V
V
BEon
base-emitter
turn-on voltage
turn-on voltage
V
CE
=
−
5 V; I
C
=
−
1 A
-
-
−
1
V