Nxp Semiconductors PIP3119-P User Manual

Philips Semiconductors

Product specification

 Logic level TOPFET

PIP3119-P 

 

 

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

V

DS

Continuous drain source voltage

1

-

50

V

I

D

Continuous drain current

V

IS

 = 5 V; T

mb 

=

 

25˚C

-

self -

A

limited

I

D

Continuous drain current

V

IS

 = 5 V; T

mb 

≤

 

121˚C

-

20

A

I

I

Continuous input current

-5

5

mA

I

IRM

Repetitive peak input current

δ

 

≤

 0.1, tp = 300 

µ

s

-50

50

mA

P

D

Total power dissipation

T

mb

 

≤

 25˚C

-

90

W

T

stg

Storage temperature

-55

175

˚C

T

j

Continuous junction temperature

2

normal operation

-

150

˚C

T

sold

Lead temperature

during soldering

-

260

˚C

V

C

Electrostatic discharge capacitor

Human body model;

-

2

kV

voltage

C = 250 pF; R = 1.5 k

Ω

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

I

DM

 = 20 A; V

DD

 

≤

 20 V

E

DSM

Non-repetitive clamping energy

T

mb

 

≤

 25˚C

-

350

mJ

E

DRM

Repetitive clamping energy

T

mb

 

≤

 95˚C; f = 250 Hz

-

45

mJ

With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.

V

DS

Drain source voltage

3

4 V 

≤

 V

IS

 

≤

 5.5 V

0

35

V

R

th j-mb

Junction to mounting base

-

-

1.25

1.39

K/W

1 Prior to the onset of overvoltage clamping.  For voltages above this value, safe operation is limited by the overvoltage clamping energy.

2 A higher T

j

 is allowed as an overload condition but at the threshold T

j(TO)

 the over temperature trip operates to protect the switch.

3 All control logic and protection functions are disabled during conduction of the source drain diode.

May 2001

2

Rev 1.000