Kingston Technology 2GB DDR3 1333MHz Kit KVR1333D3S4R9S/2GEF Data Sheet
Product codes
KVR1333D3S4R9S/2GEF
KVR1333D3S4R9S/2GEF
2GB 1Rx4 256M x 72-Bit DDR3-1333 Registered
w/ Parity CL9 240-Pin DIMM
w/ Parity CL9 240-Pin DIMM
DESCRIPTION:
This document describes ValueRAM's 256M x 72-bit
(2GB) 1Rx4 DDR3-1333 Registered w/ Parity CL9
SDRAM (Synchronous DRAM) ECC memory module,
based on eighteen 256M x 4-bit DDR3-1333 FBGA
components. The SPD is programmed to JEDEC stan-
dard latency DDR3-1333 timing of 9-9-9 at 1.5V. This
240-pin DIMM uses gold contact fingers and requires
+1.5V. The electrical and mechanical specifications
are as follows:
FEATURES:
•
JEDEC standard 1.5V ± 0.075V Power Supply
•
VDDQ = 1.5V ± 0.075V
•
667MHz fCK for 1333Mb/sec/pin
•
8 independent internal bank
•
Programmable CAS Latency: 6,7,8,9
•
Posted CAS
•
Programmable Additive Latency: 0, CL - 2, or CL - 1
clock
•
Programmable CAS Write Latency(CWL) = 7(DDR3-
1333)
•
8-bit pre-fetch
•
Burst Length: 8 (Interleave without any limit, sequential
with starting address “000” only), 4 with tCCD = 4
which does not allow seamless read or write [either
on the fly using A12 or MRS]
•
Bi-directional Differential Data Strobe
•
Internal(self) calibration : Internal self calibration
through ZQ pin (RZQ : 240 ohm ± 1%)
•
On Die Termination using ODT pin
•
Average Refresh Period 7.8us at lower than TCASE
85°C, 3.9us at 85°C < TCASE < 95°C
•
Asynchronous Reset
•
Thermal Sensor Grade B
•
PCB : Height 1.18” (30.00mm) double-sided
component
•
RoHS Compliant
PERFORMANCE:
•
CL(IDD): 9 cycles
•
Row Cycle Time (tRCmin): 49.5ns (min.)
•
Refresh to Active/Refresh Command Time (tRFCmin): 110ns
•
Row Active Time (tRASmin): 36ns (min.)
•
Power: 3.885 W (operating per module)
•
UL Rating: 94 V - 0
•
Operating Temperature: 0
o
C to 85
o
C
•
Storage Temperature: -55
o
C to +100
o
C
Document No. VALUERAM0955-001.A00 04/06/11 Page 1
DRAM SUPPORTED:
Elpida F-Die