Kingston Technology 12GB DDR3 1333 MHz Kit KVR1333D3N9HK3/12G Data Sheet
Product codes
KVR1333D3N9HK3/12G
KVR1333D3N9HK3/12G
12G (4GB 2Rx8 512M x 64-Bit x 3 pcs.)
PC3-10600 CL9 240-Pin DIMM Kit
PC3-10600 CL9 240-Pin DIMM Kit
DESCRIPTION
ValueRAM's KVR1333D3N9HK3/12G is a kit of three
512M x 64-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous
DRAM), 2Rx8 memory modules, based on sixteen 256M x 8-bit
FBGA components per module. Total kit capacity is 12GB. The
SPD's are programmed to JEDEC standard latency DDR3-1333
timing of 9-9-9. Each 240-pin DIMM uses gold contact fingers.
The electrical and mechanical specifications are as follows:
FEATURES
•
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
•
VDDQ = 1.5V (1.425V ~ 1.575V)
•
667MHz fCK for 1333Mb/sec/pin
•
8 independent internal bank
•
Programmable CAS Latency: 9, 8, 7, 6
•
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
•
8-bit pre-fetch
•
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
•
Bi-directional Differential Data Strobe
•
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
•
On Die Termination using ODT pin
•
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
•
Asynchronous Reset
•
PCB Height: 1.18” (30mm), double sided component
*Power will vary depending on the SDRAM used.
Document No. VALUERAM1019-001.A00 09/06/11 Page 1
Memory Module Specifi cations
SPECIFICATIONS
CL(IDD)
9 cycles
Row Cycle Time (tRCmin)
49.5ns (min.)
Refresh to Active/Refresh
160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
36ns (min.)
Power (Operating)
1.410 W* (per module)
UL Rating
94 V - 0
Operating Temperature
0
o
C to 85
o
C
Storage Temperature
-55
o
C to +100
o
C
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