Transcend 128MB DDR DDR266 Non-ECC Memory TS16MSD64V6G User Manual

 

 

The TS16MSD64V6G is a 16M x 64bits Double Data 

Rate SDRAM high-density for DDR266.The 

TS16MSD64V6G consists of 4pcs CMOS 16Mx16 bits 

Double Data Rate SDRAMs in 66 pin TSOP-II 400mil 

packages, and a 2048 bits serial EEPROM on a 200-pin 

printed circuit board. The TS16MSD64V6G is a Dual 

In-Line Memory Module and is intended for mounting into 

200-pin edge connector sockets. 

Synchronous design allows precise cycle control with the 

use of system clock. Data I/O transactions are possible 

on both edges of DQS. Range of operation frequencies, 

programmable latencies allow the same device to be 

useful for a variety of high bandwidth, high performance 

memory system applications. 

•  Power supply: VDD: 2.5V ± 0.2V, VDDQ: 2.5V ±0.2V 
•  Max clock Freq: 133MHZ. 
•  Double-data-rate architecture; two data transfers per   

clock cycle 

•  Differential clock inputs (CK and /CK) 
•  DLL aligns DQ and DQS transition with CK transition 
•  Auto and Self Refresh 7.8us refresh interval. 
•  Data I/O transactions on both edge of data strobe. 
•  Edge aligned data output, center aligned data input. 
•  Serial Presence Detect (SPD) with serial EEPROM   
•  SSTL-2 compatible inputs and outputs. 
•    MRS cycle with address key programs. 

      CAS Latency (Access from column address): 2.5 

   Burst Length (2,4,8 ) 

Data Sequence (Sequential & Interleave) 

 

 

 

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