Kingston Technology 512 MB, DDR II SDRAM, 800 MHz PC2 6400, SO DIMM 240-pin KHX6400D2LL/512 Data Sheet

Product codes
KHX6400D2LL/512
Page of 2
Memory Module Specification
Document No. 4804403-001.B00
05/18/06
KHX6400D2LL/512
512MB 64M x 64-Bit PC2-6400
CL4 240-Pin DIMM
KEYED
Page 1
DESCRIPTION:
This document describes Kingston's low-latency 64M x 64-bit (512MB) DDR2-800 CL4 SDRAM
(Synchronous DRAM) memory module, based on eight 64M x 8-bit DDR2 FBGA components. This
module has been tested to run at DDR2 800MHz at low latency timing of 4-4-4-12 at 2.0V. The SPD
is programmed to JEDEC standard latency 667Mhz timing of 5-5-5-15 at 1.8V. This 240-pin DIMM
uses gold contact fingers and requires +1.8V. The electrical and mechanical specifications are as
follows:
FEATURES:
Power supply :   Vdd:  1.8V ± 0.1V, Vddq:  1.8V ± 0.1V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns  DQ and DQS transition with CK transition
Programmable Read latency 3, 4, 5 (clock)
Burst Length: 4, 8 (Interleave/nibble sequential)
Programmable Burst type (sequential & interleave)
Timing Reference: 667MHz 5-5-5-15 at +1.8V / 800MHz 4-4-4-12 at +2.0V
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval (8K/64ms refresh)
Serial presence detect with EEPROM
High Performance Heat Spreader
PCB : Height 1.180” (30.00mm), single  sided  component
PERFORMANCE:
Clock Cycle Time (tCK) CL=5
3ns (min.) / 8ns (max.)
Row Cycle Time (tRC)
54ns (min.)
Refresh to Active/Refresh Command Time (tRFC)
105ns
Row Active Time (tRAS)
39ns (min.) / 70,000ns (max.)
Single Power Supply of
+1.8V (+/- .1V)
Power
1.622 W (operating)
UL Rating
94 V - 0
Operating Temperature
0
o
 C to 55
o
 C
Storage Temperature
-55
o
 C to +125
o
 C
T E C H N O L O G Y