Panasonic MALS180X User Manual

Zener Diodes 

Publication date: April 2008 

SKE00044AED 

1

This product complies with the RoHS Directive (EU 2002/95/EC).

Silicon planar type

For ESD protection



 Overview

MALS180X is optimal for cell phones and AV application, all types of

I/O circuits.

It is possible to protect against forward and reverse surges.



 Features



High resistance to surge voltages: 15 kV guaranteed



Low terminal capacitance C

t

for low loss, low distortion, and good

retention of signal waveforms.



 Absolute Maximum Ratings  T

a

= 25°C

Parameter

Symbol

Rating

Unit

Repetitive peak forward current

I

FRM

200

mA

Total power dissipation

*1

P

T

150

mW

Electrostatic discharge

*2

ESD

±

15

kV

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

-55 to +150

°

C

Note)  *1: P

T

= 150 mW achieved with a printed circuit board.

 *2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)



 Electrical Characteristics  T

a

= 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Zener voltage

*

V

Z

I

Z

= 5 mA

17.5

20.0

V

Zene operating resistance

R

Z

I

Z

= 5 mA

60

Ω

Reverse current

I

R

V

R

= 13.0 V

15

nA

Terminal capacitance

C

t

V

R

= 0 V, f = 1 MHz

4

pF

Note)  1.  Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

 2.  The temperature must be controlled 25°C for V

Z

mesurement.

     V

Z

value measured at other temperature must be adjusted to V

Z

(25°C)

 3.  * :  V

Z

guaranted 20 ms after current flow.



 Package



Code

  SSMini2-F1 


Pin Name

 1: Cathode
 2: Cathode



 Marking Symbol: SX