Dataram 4GB DDR3-1333 DTM64314D User Manual
Product codes
DTM64314D
DTM64314D
4 GB - 240-Pin 2Rx8 Unbuffered ECC DDR3 DIMM
Document 06931, Revision A, 3-Oct-11, Dataram Corporation
2011
Page 1
Features
Description
240-pin JEDEC-compliant DIMM, 133.35 mm wide by 30 mm high
Operating Voltage: 1.5 V ±0.075 V, I/O Type: SSTL_15
On-board I
2
C temperature sensor with integrated Serial Presence-
Detect (SPD) EEPROM
Data Transfer Rate: 10.6 Gigabytes/sec
Data Bursts: 8 and burst chop 4 mode
ZQ Calibration for Output Driver and On-Die Termination (ODT)
Programmable ODT / Dynamic ODT during Writes
Programmable CAS Latency: 6, 7, 8, and 9
Differential Data Strobe signals
SDRAM Addressing (Row/Col/Bank): 15/10/3
DTM64314D is an Unbuffered 512Mx72
memory module, which conforms to
JEDEC's DDR3, PC3-10600 standard. The
assembly is Dual-Rank. Each Rank is
comprised of nine 256Mx8 DDR3-1333
Hynix SDRAMs. One 2K-bit EEPROM is
used for Serial Presence Detect.
A thermal sensor accurately monitors the
DIMM module and can prevent exceeding
the maximum operating temperature of 95C.
memory module, which conforms to
JEDEC's DDR3, PC3-10600 standard. The
assembly is Dual-Rank. Each Rank is
comprised of nine 256Mx8 DDR3-1333
Hynix SDRAMs. One 2K-bit EEPROM is
used for Serial Presence Detect.
A thermal sensor accurately monitors the
DIMM module and can prevent exceeding
the maximum operating temperature of 95C.
Both output driver strength and input
termination impedance are programmable to
maintain signal integrity on the I/O signals.
termination impedance are programmable to
maintain signal integrity on the I/O signals.
Fully RoHS Compliant
Pin Configuration
Pin Description
Front Side
Back Side
Name
Function
1 V
REFDQ
31 DQ25
61 A2
91 DQ41 121 V
SS
151 V
SS
181 A1
211 V
SS
CB[7:0]
Data Check Bits
2 V
SS
32 V
SS
62 V
DD
92 V
SS
122 DQ4 152 DM3
182 V
DD
212 DM5 DQ[63:0]
Data Bits
3 DQ0 33 /DQS3
63 CK1
93 /DQS5 123 DQ5 153 NC
183 V
DD
213 NC
DQS[8:0], /DQS[8:0] Differential Data Strobes
4 DQ1 34 DQS3
64 /CK1
94 DQS5 124 V
SS
154 V
SS
184 CK0
214 V
SS
DM[8:0]
Data Mask
5 V
SS
35 V
SS
65 V
DD
95 V
SS
125 DM0 155 DQ30
185 /CK0
215 DQ46 CK[1:0], /CK[1:0]
Differential Clock Inputs
6 /DQS0 36 DQ26
66 V
DD
96 DQ42 126 NC
156 DQ31
186 V
DD
216 DQ47 CKE[1:0]
Clock Enables
7 DQS0 37 DQ27
67 V
REFCA
97 DQ43 127 V
SS
157 V
SS
187 /Event
217 V
SS
/CAS
Column Address Strobe
8 V
SS
38 V
SS
68 P
AR
_I
N
, NC* 98 V
SS
128 DQ6 158 CB4
188 A0
218 DQ52 /RAS
Row Address Strobe
9 DQ2 39 CB0
69 VDD
99 DQ48 129 DQ7 159 CB5
189 V
DD
219 DQ53 /S[3:0]
Chip Selects
10 DQ3 40 CB1
70 A10/AP
100 DQ49 130 V
SS
160 V
SS
190 BA1
220 V
SS
/WE
Write Enable
11 V
SS
41 V
SS
71 BA0
101 V
SS
131 DQ12 161 DM8
191 V
DD
221 DM6 A[15:0]
Address Inputs
12 DQ8 42 /DQS8
72 V
DD
102 /DQS6 132 DQ13 162 NC
192 /RAS
222 NC
BA[2:0]
Bank Addresses
13 DQ9 43 DQS8
73 /WE
103 DQS6 133 V
SS
163 V
SS
193 /S0
223 V
SS
ODT[1:0]
On Die Termination Inputs
14 V
SS
44 V
SS
74 /CAS
104 V
SS
134 DM1 164 CB6
194 V
DD
224 DQ54 SA[2:0]
SPD Address
15 /DQS1 45 CB2
75 V
DD
105 DQ50 135 NC
165 CB7
195 ODT0
225 DQ55 SCL
SPD Clock Input
16 DQS1 46 CB3
76 /S1
106 DQ51 136 V
SS
166 V
SS
196 A13
226 V
SS
SDA
SPD Data Input/Output
17 V
SS
47 V
SS
77 ODT1
107 V
SS
137 DQ14 167 NC (TEST) 197 V
DD
227 DQ60 /EVENT
Temperature Sensing
18 DQ10 48 V
TT
, NC
78 V
DD
108 DQ56 138 DQ15 168 /RESET
198 /S3, NC* 228 DQ61 /RESET
Reset for register and DRAMs
19 DQ11 49 V
TT
, NC
79 /S2, NC
109 DQ57 139 V
SS
169 CKE1
199 V
SS
229 V
SS
PAR_IN
Parity bit for Addr/Ctrl
20 V
SS
50 CKE0
80 V
SS
110 V
SS
140 DQ20 170 V
DD
200 DQ36
230 DM7 /ERR_OUT
Error bit for Parity Error
21 DQ16 51 V
DD
81 DQ32
111 /DQS7 141 DQ21 171 A15*
201 DQ37
231 NC
A12/BC
Combination input: Addr12/Burst Chop
22 DQ17 52 BA2
82 DQ33
112 DQS7 142 V
SS
172 A14*
202 V
SS
232 V
SS
A10/AP
Combination input: Addr10/Auto-precharge
23 V
SS
53 /E
RR
_O
UT
, NC* 83 V
SS
113 V
SS
143 DM2 173 V
DD
203 DM4
233 DQ62 V
SS
Ground
24 /DQS2 54 V
DD
84 /DQS4
114 DQ58 144 NC
174 A12/BC
204 NC
234 DQ63 V
DD
Power
25 DQS2 55 A11
85 DQS4
115 DQ59 145 V
SS
175 A9
205 V
SS
235 V
SS
V
DDSPD
SPD EEPROM Power
26 V
SS
56 A7
86 V
SS
116 V
SS
146 DQ22 176 V
DD
206 DQ38
236 V
DDSPD
V
REFDQ
Reference Voltage for DQ’s
27 DQ18 57 V
DD
87 DQ34
117 SA0
147 DQ23 177 A8
207 DQ39
237 SA1
V
REFCA
Reference Voltage for CA
28 DQ19 58 A5
88 DQ35
118 SCL
148 V
SS
178 A6
208 V
SS
238 SDA V
TT
Termination Voltage
29 V
SS
59 A4
89 V
SS
119 SA2
149 DQ28 179 V
DD
209 DQ44
239 V
SS
NC
No Connection
30 DQ24 60 V
DD
90 DQ40
120 V
TT
150 DQ29 180 A3
210 DQ45
240 V
TT
*
Not used
Identification
DTM64314D 512Mx72
4GB 2Rx8 PC3-10600E-9-11-E1
Performance range
Clock / Module Speed / CL-t
4GB 2Rx8 PC3-10600E-9-11-E1
Performance range
Clock / Module Speed / CL-t
RCD
-t
RP
667 MHz / PC3-10600 / 9-9-9
533 MHz / PC3-8500 / 8-8-8
533 MHz / PC3-8500 / 7-7-7
400 MHz / PC3-6400 / 6-6-6
533 MHz / PC3-8500 / 8-8-8
533 MHz / PC3-8500 / 7-7-7
400 MHz / PC3-6400 / 6-6-6