Intel i3-3130M AW8063801111500 User Manual

66

Datasheet, Volume 1

SA_BS[2:0]

Bank Select: These signals define which banks are selected within 

each SDRAM rank.

O

DDR3

SA_WE#

Write Enable Control Signal: This signal is used with SA_RAS# and 

SA_CAS# (along with SA_CS#) to define the SDRAM Commands.

O

DDR3

SA_RAS#

RAS Control Signal: This signal is used with SA_CAS# and SA_WE# 

(along with SA_CS#) to define the SRAM Commands.

O

DDR3

SA_CAS#

CAS Control Signal: This signal is used with SA_RAS# and SA_WE# 

(along with SA_CS#) to define the SRAM Commands.

O

DDR3

SA_DQS[8:0] 

SA_DQS#[8:0]

Data Strobes: SA_DQS[8:0] and its complement signal group make 

up a differential strobe pair. The data is captured at the crossing point 

of SA_DQS[8:0] and its SA_DQS#[8:0] during read and write 

transactions.

I/O

DDR3 

SA_DQ[63:0]

Data Bus: Channel A data signal interface to the SDRAM data bus.

I/O

DDR3 

SA_MA[15:0]

Memory Address: These signals are used to provide the multiplexed 

row and column address to the SDRAM.

O

DDR3

SA_CK[3:0]

SA_CK#[3:0]

SDRAM Differential Clock: Channel A SDRAM Differential clock signal 

pair. The crossing of the positive edge of SA_CK and the negative edge 

of its complement SA_CK# are used to sample the command and 

control signals on the SDRAM.

O

DDR3

SA_CKE[3:0]

Clock Enable: (1 per rank). These signals are used to:

• Initialize the SDRAMs during power-up.
• Power down SDRAM ranks.
• Place all SDRAM ranks into and out of self-refresh during STR.

O

DDR3

SA_CS#[3:0]

Chip Select: (1 per rank). These signals are used to select particular 

SDRAM components during the active state. There is one Chip Select 

for each SDRAM rank.

O

DDR3

SA_ODT[3:0]

On Die Termination: Active Termination Control.

O

DDR3