Intel E5-2697 v3 CM8064401807100 User Manual

Product codes
CM8064401807100
Page of 258
180
Intel® Xeon® Processor E5-1600/E5-2600/E5-4600 Product Families
Datasheet Volume One
Notes:
1.
V
TT
 refers to instantaneous V
TT
.
2.
Measured at 0.31*V
TT
3.
Vin between 0V and V
TT
4.
Refer to the appropriate Platform Design Guide (PDG) for routing design guidelines.
Notes:
R
ON
Buffer On Resistance
Signals SVIDCLK, SVIDDATA
14
Ω
2
I
IL
Input Leakage Current
Signals SVIDCLK, SVIDDATA
±900
μA
3,4
I
IL
Input Leakage Current
Signal SVIDALERT_N
±500
μA
3,4
Table 7-22. Processor Asynchronous Sideband DC Specifications
Symbol
Parameter
Min
Max
Units
Notes
Input Edge Rate
Signals: CAT_ERR_N, MEM_HOT_C{01/23}_N, 
PMSYNC, PROCHOT_N, PWRGOOD, RESET_N
0.05
V/ns
4,5
CMOS1.05v Signals
V
IL_CMOS1.05v
Input Low Voltage
0.3*V
TT
V
1,2
V
IH_CMOS1.05v
Input High Voltage 
0.7*V
TT
V
1,2
V
IL_MAX
Input Low Voltage 
Signal PWRGOOD
0.320
V
1,2,5,
V
IH_MIN
Input High Voltage 
Signal PWRGOOD
0.640
V
1,2,5
V
OL_CMOS1.05v
Output Low Voltage
0.12*V
TT
V
1,2
V
OH_CMOS1.05v
Output High Voltage
0.88*V
TT
V
1,2
I
IL_CMOS1.05v
Input Leakage Current
±50
mA
1,2
I
O_CMOS1.05v
Output Current
(R
TEST
 = 500 ohm)
±1.50
mA
1,2
A
NM_Rise
Non-Monotonicity Amplitude, Rising Edge 
Signal PWRGOOD
0.135
V
5
A
NM_Fall
Non-Monotonicity Amplitude, Falling Edge 
Signal PWRGOOD
0.165
V
5
Open Drain CMOS (ODCMOS) Signals
V
IL_ODCMOS
Input Low Voltage
0.3*V
TT
V
1,2
V
IH_ODCMOS
Input High Voltage 
0.7*V
TT
V
1,2
V
OH_ODCMOS
Output High Voltage
Signals: CAT_ERR_N, ERROR_N[2:0], 
THERMTRIP_N, PROCHOT_N, CPU_ONLY_RESET
V
TT(max)
V
1,2
I
OL
Output Leakage Current,
Signal MEM_HOT_C{01/23}_N
±100
mA
3
I
OL
Output Leakage Current
(R
TEST
 = 50 ohm)
±900
mA
3
R
ON
Buffer On Resistance
Signals: CAT_ERR_N, CPU_ONLY_RESET, 
ERROR_N[2:0], MEM_HOT_C{01/23}_N,
PROCHOT_N, THERMTRIP_N
14
W
1,2
Table 7-21. Serial VID Interface (SVID) DC Specifications (Sheet 2 of 2)
Symbol
Parameter
Min
Typ
Max
Units
Notes