Kingston Technology HyperX 512MB 800MHz DDR2 Non-ECC Ultra Low-Latency DIMM KHX6400D2UL/512 Data Sheet

Product codes
KHX6400D2UL/512
Page of 2
Memory Module Specification
Document No. 4804757-001.A00
06/12/07
KHX6400D2UL/512
512MB 64M x 64-Bit PC2-6400
 CL3 240-Pin DIMM
KEYED
Page 1
DESCRIPTION:
This document describes Kingston's ultra low-latency 64M x 64-bit (512MB) DDR2-800 CL3
SDRAM (Synchronous DRAM) memory module, based on eight 64M x 8-bit DDR2 FBGA
components. This module has been tested to run at DDR2 800MHz at low latency timing of 3-3-3-10
at 2.3-2.35V. The SPD is programmed to JEDEC standard latency 800Mhz timing of 5-5-5-15 at
1.8V. This 240-pin DIMM uses gold contact fingers and requires +1.8V. The electrical and
mechanical specifications are as follows:
FEATURES:
Power supply :   Vdd:  1.8V ± 0.1V, Vddq:  1.8V ± 0.1V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs (CK and CK)
DLL aligns  DQ and DQS transition with CK transition
Programmable Read latency 3, 4, 5 (clock)
Burst Length: 4, 8 (Interleave/nibble sequential)
Programmable Burst type (sequential & interleave)
Timing Reference: 800MHz 5-5-5-15 at +1.8V / 800MHz 3-3-3-10 at +2.3-2.35V
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval (8K/64ms refresh)
Serial presence detect with EEPROM
High Performance Heat Spreader
PCB : Height 1.180” (30.00mm), single sided component
PERFORMANCE:
Clock Cycle Time (tCK) CL=5
2.5ns (min.) / 8ns (max.)
Row Cycle Time (tRC)
57.5ns (min.)
Refresh to Active/Refresh Command Time (tRFC)
105ns
Row Active Time (tRAS)
45ns (min.) / 70,000ns (max.)
Single Power Supply of
+1.8V (+/- .1V)
Power
1.224 W (operating )
UL Rating
94 V - 0
Operating Temperature
0
o
 C to 55
o
 C
Storage Temperature
-55
o
 C to +125
o
 C
T E C H N O L O G Y