Intel X3460 BV80605001908AL User Manual

Product codes
BV80605001908AL
Page of 98
Signal Description
50
Datasheet, Volume 1
6.1
System Memory Interface
Table 6-2.
Memory Channel A
Signal Name
Description 
Direction
Type
SA_BS[2:0]
Bank Select: These signals define which banks are 
selected within each SDRAM rank.
O
DDR3
SA_CAS#
CAS Control Signal: This signal is used with SA_RAS# and 
SA_WE# (along with SA_CS#) to define the SDRAM 
Commands.
O
DDR3
SA_CK#[1:0]
SDRAM Inverted Differential Clock: Channel A SDRAM 
Differential clock signal-pair complement.
O
DDR3
SA_CK#[3:2]
SDRAM Inverted Differential Clock: Channel A SDRAM 
Differential clock signal-pair complement.
O
DDR3
SA_CK[1:0]
SDRAM Differential Clock: Channel A SDRAM Differential 
clock signal pair.
The crossing of the positive edge of SA_CKx and the 
negative edge of its complement SA_CKx# are used to 
sample the command and control signals on the SDRAM.
O
DDR3
SA_CK[3:2]
SDRAM Differential Clock: Channel A SDRAM Differential 
clock signal pair.
The crossing of the positive edge of SA_CKx and the 
negative edge of its complement SA_CKx# are used to 
sample the command and control signals on the SDRAM.
O
DDR3
SA_CKE[3:0]
Clock Enable: (1 per rank). These signals are used to:
• Initialize the SDRAMs during power-up
• Power-down SDRAM ranks
• Place all SDRAM ranks into and out of self-refresh 
during STR
O
DDR3
SA_CS#[3:0]
Chip Select: (1 per rank) These signals are used to select 
particular SDRAM components during the active state. 
There is one Chip Select for each SDRAM rank.
O
DDR3
SA_CS#[7:4]
These signals are only used for processors and platforms 
that have Registered DIMM support. These signals are 
used to select particular SDRAM components during the 
active state and SA_CS#[7:6] are used as the on die 
termination for the first DIMM.
O
DDR3
SA_DM[7:0]
Data Mask: These signals are used to mask individual 
bytes of data in the case of a partial write, and to 
interrupt burst writes.
When activated during writes, the corresponding data 
groups in the SDRAM are masked. There is one 
SA_DM[7:0] for every data byte lane.
Note: These signals are not used by the Intel Xeon 
processor 3400 series. They are connected to V
SS
 on the 
package.
SA_DQ[63:0]
Data Bus: Channel A data signal interface to the SDRAM 
data bus.
I/O
DDR3
SA_DQS[8:0]
SA_DQS#[8:0]
Data Strobes: SA_DQS[8:0] and its complement signal 
group make up a differential strobe pair. The data is 
captured at the crossing point of SA_DQS[8:0] and its 
SA_DQS#[8:0] during read and write transactions.
I/O
DDR3
SA_ECC_CB[7:0]
Data Lines for ECC Check Byte. 
I/O
DDR3
SA_MA[15:0]
Memory Address: These signals are used to provide the 
multiplexed row and column address to the SDRAM.
O
DDR3
SA_ODT[3:0]
On Die Termination: Active Termination Control
O
DDR3
SA_RAS#
RAS Control Signal: This signal is used with SA_CAS# and 
SA_WE# (along with SA_CS#) to define the SRAM 
Commands.
O
DDR3
SA_WE#
Write Enable Control Signal: This signal is used with 
SA_RAS# and SA_CAS# (along with SA_CS#) to define 
the SDRAM Commands.
O
DDR3