Intel E3-1265L v3 CM8064601467406 User Manual
Product codes
CM8064601467406
Table 42.
VCCIO_OUT, VCOMP_OUT, and VCCIO_TERM
Symbol
Parameter
Typ
Max
Units
Notes
VCCIO_OUT
Termination
Voltage
1.0
—
V
ICCIO_OUT
Maximum
External Load
—
300
mA
VCOMP_OUT
Termination
Voltage
1.0
—
V
1
VCCIO_TERM
Termination
Voltage
1.0
—
V
2
Notes: 1. VCOMP_OUT may only be used to connect to PEG_RCOMP and DP_RCOMP.
2. Internal processor power for signal termination.
Table 43.
DDR3/DDR3L Signal Group DC Specifications
Symbol
Parameter
Min
Typ
Max
Units
Notes
1
V
IL
Input Low Voltage
—
V
DDQ
/2
0.43*V
DDQ
V
2, 4, 11
V
IH
Input High Voltage
0.57*V
DDQ
V
DDQ
/2
—
V
3, 11
V
IL
Input Low Voltage
(SM_DRAMPWROK)
—
—
0.15*V
DDQ
V
—
V
IH
Input High Voltage
(SM_DRAMPWROK)
0.45*V
DDQ
—
1.0
V
10, 12
R
ON_UP(DQ)
DDR3/DDR3L Data
Buffer pull-up
Resistance
20
26
32
Ω
5, 11
R
ON_DN(DQ)
DDR3/DDR3L Data
Buffer pull-down
Resistance
20
26
32
Ω
5, 11
R
ODT(DQ)
DDR3/DDR3L On-die
termination equivalent
resistance for data
signals
38
50
62
Ω
11
V
ODT(DC)
DDR3/DDR3L On-die
termination DC working
point (driver set to
receive mode)
0.45*V
DDQ
0.5*V
DDQ
0.55*V
DDQ
V
11
R
ON_UP(CK)
DDR3/DDR3L Clock
Buffer pull-up
Resistance
20
26
32
Ω
5, 11,
13
R
ON_DN(CK)
DDR3/DDR3L Clock
Buffer pull-down
Resistance
20
26
32
Ω
5, 11,
13
R
ON_UP(CMD)
DDR3/DDR3L Command
Buffer pull-up
Resistance
15
20
25
Ω
5, 11,
13
R
ON_DN(CMD)
DDR3/DDR3L Command
Buffer pull-down
Resistance
15
20
25
Ω
5, 11,
13
R
ON_UP(CTL)
DDR3/DDR3L Control
Buffer pull-up
Resistance
19
25
31
Ω
5, 11,
13
continued...
Processor—Electrical Specifications
Intel
®
Xeon
®
Processor E3-1200 v3 Product Family
Datasheet – Volume 1 of 2
June 2013
96
Order No.: 328907-001