Hynix HMT351R7AFR8A-H9T7 User Manual
APCPCWM_4828539:WP_0000005WP_0000005
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Rev. 1.0 / Aug. 2010
46
Refresh parameters by device density
Standard Speed Bins
DDR3 SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
DDR3-800 Speed Bins
Refresh parameters by device density
Parameter
RTT_Nom Setting
512Mb
1Gb
2Gb
4Gb
8Gb
Units Notes
REF command ACT or
REF command time
tRFC
90
110
160
300
350
ns
Average periodic
refresh interval
tREFI
0
C
T
CASE
85
C
7.8
7.8
7.8
7.8
7.8
us
85
C
T
CASE
95
C
3.9
3.9
3.9
3.9
3.9
us
1
For specific Notes See “Standard Speed Bins” on page 46.
Speed Bin
DDR3-800E
Unit
Notes
CL - nRCD - nRP
6-6-6
Parameter
Symbol
min
max
Internal read command to first data
t
AA
15
20
ns
ACT to internal read or write delay time
t
RCD
15
—
ns
PRE command period
t
RP
15
—
ns
ACT to ACT or REF command period
t
RC
52.5
—
ns
ACT to PRE command period
t
RAS
37.5
9 * tREFI
ns
CL = 5
CWL = 5
t
CK(AVG)
Reserved
ns
1, 2, 3, 4
CL = 6
CWL = 5
t
CK(AVG)
2.5
3.3
ns
1, 2, 3
Supported CL Settings
6
n
CK
Supported CWL Settings
5
n
CK
B48614/178.104.2.80/2010-08-12 13:01