Microchip Technology MCP6N11T-001E/MNY Linear IC TDFN-8 MCP6N11T-001E/MNY Data Sheet
Product codes
MCP6N11T-001E/MNY
© 2011 Microchip Technology Inc.
DS25073A-page 3
MCP6N11
1.0
ELECTRICAL
CHARACTERISTICS
CHARACTERISTICS
1.1
Absolute Maximum Ratings †
V
DD
– V
SS
.......................................................................6.5V
Current at Input Pins †† ...............................................±2 mA
Analog Inputs (V
Analog Inputs (V
IP
and V
IM
) †† ..... V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage....................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ...................................-65°C to +150°C
Max. Junction Temperature ........................................ +150°C
ESD protection on all pins (HBM, CDM, MM)
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ...................................-65°C to +150°C
Max. Junction Temperature ........................................ +150°C
ESD protection on all pins (HBM, CDM, MM)
.≥ 2 kV, 1.5 kV, 300V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other
conditions above those indicated in the operational
listings of this specification is not implied. Exposure to
maximum rating conditions for extended periods may
affect device reliability.
†† See
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other
conditions above those indicated in the operational
listings of this specification is not implied. Exposure to
maximum rating conditions for extended periods may
affect device reliability.
†† See
and
1.2
Specifications
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= 1.8V to 5.5V, V
SS
= GND, EN/CAL = V
DD
,
V
CM
= V
DD
/2, V
DM
= 0V, V
REF
= V
DD
/2, V
L
= V
DD
/2, R
L
= 10 k
Ω to V
L
and G
DM
= G
MIN
; see
Parameters
Sym
Min
Typ
Max
Units
G
MIN
Conditions
Input Offset
Input Offset Voltage,
Calibrated
Input Offset Voltage,
Calibrated
V
OS
-3.0
—
+3.0
mV
1
)
-2.0
—
+2.0
mV
2
-0.85
—
+0.85
mV
5
-0.50
—
+0.50
mV
10
-0.35
—
+0.35
mV
100
Input Offset Voltage
Trim Step
Trim Step
V
OSTRM
—
0.36
—
mV
1
—
0.21
—
mV
2
—
0.077
—
mV
5
—
0.045
—
mV
10
—
0.014
—
mV
100
Input Offset Voltage
Drift
Drift
ΔV
OS
/
ΔT
A
—
±90/G
MIN
—
µV/°C 1 to 10 T
A
= -40°C to +125°C
)
—
±2.7
—
µV/°C
100
Power Supply
Rejection Ratio
Rejection Ratio
PSRR
62
82
—
dB
1
68
88
—
dB
2
75
96
—
dB
5
81
102
—
dB
10
86
112
—
dB
100
Note 1:
V
CM
= (V
IP
+ V
IM
) / 2, V
DM
= (V
IP
– V
IM
) and G
DM
= 1 + R
F
/R
G
.
2:
The V
OS
spec limits include 1/f noise effects.
3:
This is the input offset drift without V
OS
re-calibration; toggle EN/CAL to minimize this effect.
4:
These specs apply to both the V
IP
, V
IM
input pair (use V
CM
) and to the V
REF
, V
FG
input pair (V
REF
takes V
CM
’s place).
5:
This spec applies to the V
IP
, V
IM
, V
REF
and V
FG
pins individually.
6:
show the V
IVR
and V
DMR
variation over temperature.
7: