STMicroelectronics M24C64-WMN6TP Memory IC M24C64-WMN6TP Data Sheet
Product codes
M24C64-WMN6TP
DC and AC parameters
M24C64-W M24C64-R M24C64-F
DocID16891 Rev 28
Table 13. DC characteristics (M24C64-W, device grade 6)
Symbol
Parameter
Test conditions (in addition to those
)
Min.
Max.
Unit
I
LI
Input leakage current
(SCL, SDA, E2, E1,
E0)
E0)
V
IN
= V
SS
or
V
CC
, device in Standby
mode
-
± 2
µA
I
LO
Output leakage
current
current
SDA in Hi-Z, external voltage applied
on SDA: V
on SDA: V
SS
or
V
CC
-
± 2
µA
I
CC
Supply current (Read)
2.5 V < V
CC
< 5.5 V, f
c
= 400 kHz
(rise/fall time < 50 ns)
-
2
mA
2.5 V < V
CC
< 5.5 V, f
c
= 1 MHz
(1)
(rise/fall time < 50 ns)
1. Only for devices identified with process letter K.
-
2.5
mA
I
CC0
Supply current (Write)
During t
W
,
2.5 V ≤ V
CC
≤ 5.5 V
-
5
(2)
2. Characterized value, not tested in production.
mA
I
CC1
Standby supply
current
current
Device not selected
(3)
,
V
IN
= V
SS
or
V
CC
, V
CC
= 2.5 V
3. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t
W
(t
W
is triggered by the correct decoding of a Write instruction).
-
2
µA
Device not selected
,
V
IN
= V
SS
or
V
CC
, V
CC
= 5.5 V
-
3
(4)
4. Only for new products identified with process letter K, previous products offer I
CC1(max)
= 5 µA
µA
V
IL
Input low voltage
(SCL, SDA, WC)
-
–0.45
0.3 V
CC
V
V
IH
Input high voltage
(SCL, SDA)
-
0.7 V
CC
6.5
V
Input high voltage
(WC, E2, E1, E0)
-
0.7 V
CC
V
CC
+0.6
V
V
OL
Output low voltage
I
OL
= 2.1 mA, V
CC
= 2.5 V or
I
OL
= 3 mA, V
CC
= 5.5 V
-
0.4
V