Texas Instruments Single Cell Battery Fuel Gauge Evaluation Module BQ27210EVM BQ27210EVM Data Sheet

Product codes
BQ27210EVM
Page of 35
www.ti.com
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
SLUS707B – APRIL 2006 – REVISED JANUARY 2007
MIN
MAX
UNIT
V
CC
Supply voltage
2.6
4.5
V
T
A
Operating free-air temperature
–20
70
°
C
Input voltage, SRP and SRN with respect to V
SS
–100
100
mV
over operating free-air temperature range and supply voltage range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GENERAL
I
CC(VCC)
Active current
52
90
I
CC(SLP)
Sleep current
V
BAT
= V
CC
1.0
2.5
µA
I
CC(SHP)
Ship current (bq27010 only)
0.9
2.0
I
CC(POR)
Hibernate current
0 < V
CC
< 1.5 V
0.6
1.5
RBI pin only, V
CC
<
RBI current
< 1
20
nA
V
CC(POR)
V
(POR)
POR threshold
2.0
2.6
V
Input impedance
BAT, SRN, SRP
10
M
Ω
Pull-down current
HDQ, SCL, SDA
2.7
4.5
µA
HDQ, SCL, SDA and GPIO
V
CC
< 4.2 V
1.5
V
IH
High-level input voltage
V
CC
> 4.2 V
1.7
V
IL
Low-level input voltage
0.7
V
Low-level output voltage (GPIO)
I
OL
= 1 mA
0.4
V
OL
Low-level output voltage (HDQ, SCL, SDA)
I
OL
= 2 mA
0.4
VOLTAGE AND TEMPERATURE MEASUREMENT
Measurement range
V
CC
= V
(BAT)
2.6
4.5
V
Reported voltage resolution
2.7
mV
Reported accuacy
-25
25
Voltage update time
2.56
s
Reported temperature resolution
0.25
°
K
Reported temperature accuracy
-3
3
Temperature update time
2.56
s
TIME, CURRENT AND CAPACITY (3.0 V
V
CC
4.2 V, 0
°
C
T
A
50
°
C)
f
OSC
Internal oscillator frequency
-2.2%
1.5%
Current gain variability
-0.5%
0.5%
Coulometric gain variability
-1.7%
0.5%
Coulomb counter input offset
(1)
-15
0
15
µV
V
SRP
-V
SRN
differential input
–100
100
mV
EEPROM PROGRAMMING ( V
CC
3.0 V, -20
°
C
T
A
35
°
C)
(2)
Programming voltage rise time
0.5
1.5
ms
Programming voltage high time
10
100
ms
Programming voltage fall time
0.5
1.5
ms
Programming voltage
Applied to PGM pin
20
22
V
EEPROM programming current
V
PROGRAM
= 21 V
15
mA
(1)
Excludes contributions to the offset due to PCB layout or other factors external to the bq27010/bq27210.
(2)
Maximum number of programming cycles on the EEPROM is 10 and data retention time is 10 years at T
A
= 85
°
C.
3