STMicroelectronics M24C64-WBN6P Memory IC M24C64-WBN6P Data Sheet
Product codes
M24C64-WBN6P
DocID16891 Rev 28
M24C64-W M24C64-R M24C64-F
41
Table 14. DC characteristics (M24C64-R, device grade 6)
Symbol
Parameter
Test conditions
(1)
(in addition to
those in
)
1. If the application uses the voltage range R device with 2.5 V
V
cc
5.5 V and -40 °C < T
A
< +85 °C,
please refer to
instead of this table.
Min.
Max.
Unit
I
LI
Input leakage current
( SCL, SDA)
V
IN
= V
SS
or
V
CC
, device in
Standby mode
-
± 2
µA
I
LO
Output leakage current
SDA in Hi-Z, external voltage
applied on SDA: V
applied on SDA: V
SS
or
V
CC
-
± 2
µA
I
CC
Supply current (Read)
V
CC
= 1.8 V, f
c
= 400 kHz
-
0.8
mA
f
c
= 1 MHz
(2)
2. Only for devices identified with process letter K.
-
2.5
mA
I
CC0
Supply current (Write)
During t
W
,
1.8 V
V
CC
2.5 V
-
3
(3)
3. Characterized value, not tested in production.
mA
I
CC1
Standby supply current
Device not selected
(4)
,
V
IN
= V
SS
or
V
CC
, V
CC
= 1.8 V
4. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
completion of the internal write cycle t
W
(t
W
is triggered by the correct decoding of a Write instruction).
-
1
µA
V
IL
Input low voltage
(SCL, SDA, WC)
1.8 V
V
CC
< 2.5 V
–0.45
0.25 V
CC
V
V
IH
Input high voltage
(SCL, SDA)
1.8 V
V
CC
< 2.5 V
0.75 V
CC
6.5
V
Input high voltage
(WC)
1.8 V
V
CC
< 2.5 V
0.75 V
CC
V
CC
+ 0.6
V
V
OL
Output low voltage
I
OL
= 1 mA
(5)
, V
CC
= 1.8 V
5. I
OL
= 0.7 mA for previous devices (identified by process letters G or S).
-
0.2
V