Microchip Technology 93AA86C-I/SN Memory IC SOIC-8 93AA86C-I/SN Data Sheet

Product codes
93AA86C-I/SN
Page of 38
 2003-2012 Microchip Technology Inc.
DS21797L-page 3
93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings 
(†)
V
CC
............................................................................................................................................................................. 7.0V
All inputs and outputs w.r.t. V
SS
..........................................................................................................-0.6V to V
CC
 +1.0V
Storage temperature ............................................................................................................................... -65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
ESD protection on all pins
  4 kV
TABLE 1-1:
DC CHARACTERISTICS
Note:
† 
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and functional operation of the device at those or any other
conditions above those indicated in the operational listings of this specification is not implied. Exposure to
maximum rating conditions for extended periods may affect device reliability.
All parameters apply over the specified 
ranges unless otherwise noted.
Industrial (I): 
T
A
 = -40°C to +85°C, V
CC
 = +1.8V to 5.5V
Automotive (E):  T
A
 = -40°C to +125°C, V
CC
 = +2.5V to 5.5V
Param. 
No.
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
D1
V
IH
1
V
IH
2
High-level input voltage
2.0
0.7 V
CC

V
CC
 +1
V
CC
 +1
V
V
V
CC
 
2.7V
V
CC
 < 2.7V
D2
V
IL
1
V
IL
2
Low-level input voltage
-0.3
-0.3

0.8
0.2 V
CC
V
V
V
CC
 
2.7V
V
CC
 < 2.7V
D3
V
OL
1
V
OL
2
Low-level output voltage


0.4
0.2
V
V
I
OL
 = 2.1 mA, V
CC
 = 4.5V
I
OL
 = 100 
A, V
CC
 = 2.5V
D4
V
OH
1
V
OH
2
High-level output voltage
2.4
V
CC
 - 0.2


V
V
I
OH
 = -400 
A, V
CC
 = 4.5V
I
OH
 = -100 
A, V
CC
 = 2.5V
D5
I
LI
Input leakage current
±1
A
V
IN
 = V
SS
 or V
CC
D6
I
LO
Output leakage current
±1
A
V
OUT
 = V
SS
 or V
CC
D7
C
IN
C
OUT
Pin capacitance (all inputs/
outputs)
7
pF
V
IN
/V
OUT
 = 0V (Note 1)
T
A
 = 25°C, F
CLK
 = 1 MHz
D8
I
CC
 write Write current

500
3
mA
A
F
CLK
 = 3 MHz, V
CC
 = 5.5V
F
CLK
 = 2 MHz, V
CC
 = 2.5V
D9
I
CC
 read
Read current



100
1
500
mA
A
A
F
CLK
 = 3 MHz, V
CC
 = 5.5V
F
CLK
 = 2 MHz, V
CC
 = 3.0V
F
CLK
 = 2 MHz, V
CC
 = 2.5V
D10
I
CCS
Standby current


1
5
A
A
I – Temp
E – Temp
CLK = CS = 0V
ORG = DI 
PE = V
SS
 or V
CC
(Note 2) (Note 3)
D11
V
POR
V
CC
 voltage detect

1.5
3.8

V
V
(Note 1)
93AA86A/B/C, 93LC86A/B/C
93C86A/B/C
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
ORG and PE pin not available on ‘A’ or ‘B’ versions.
3:
Ready/
Busy
 status must be cleared from DO; se
.