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Microchip Technology Microstick for the 3V PIC24F K-series DM240013-1 DM240013-1 Data Sheet

Product codes
DM240013-1
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Page of 278
 2008-2011 Microchip Technology Inc.
DS39927C-page 229
PIC24F16KA102 FAMILY
TABLE 29-11: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 1.8V to 3.6V (unless otherwise stated)
Operating temperature
-40°C 
 T
A
 
 +85°C for Industrial
-40°C 
 T
A
 
 +125°C for Extended
Param
No.
Sym
Characteristic
Min
Typ
)
Max
Units
Conditions
Program Flash Memory
D130
E
P
Cell Endurance
10,000
)
—
—
E/W
D131
V
PR
V
DD
 for Read
V
MIN
—
3.6
V
V
MIN
 = Minimum operating voltage
D133A
T
IW
Self-Timed Write Cycle Time
—
2
—
ms
D134
T
RETD
Characteristic Retention
40
—
—
Year
Provided no other specifications are 
violated
D135
I
DDP
Supply Current During 
Programming
—
10
—
mA
Note 1:
Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.
2:
Self-write and block erase.
TABLE 29-12: DC CHARACTERISTICS: DATA EEPROM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 1.8V to 3.6V (unless otherwise stated)
Operating temperature
-40°C 
 T
A
 
 +85°C for Industrial
-40°C 
 T
A
 
 +125°C for Extended
Param
No.
Sym
Characteristic
Min
Typ
(
)
Max
Units
Conditions
Data EEPROM Memory
D140
E
PD
Cell Endurance
100,000
—
—
E/W
D141
V
PRD
V
DD
 for Read
V
MIN
—
3.6
V
V
MIN
 = Minimum operating voltage
D143A
T
IWD
Self-Timed Write Cycle 
Time
—
4
—
ms
D143B
T
REF
Number of Total Write/Erase 
Cycles Before Refresh
—
10M
—
E/W
D144
T
RETDD
Characteristic Retention
40
—
—
Year
Provided no other specifications are 
violated
D145
I
DDPD
Supply Current During 
Programming
—
7
—
mA
Note 1:
Data in “Typ” column is at 3.3V, 25°C unless otherwise stated.