Microchip Technology MCP6V01DM-VOS Data Sheet

DS22058C-page 4

© 2008 Microchip Technology Inc.

Output
Maximum Output Voltage Swing

V

OL

, V

OH

V

SS

+ 15

—

V

DD

− 15

mV

G = +2, 0.5V input overdrive

Output Short Circuit Current

I

SC

—

±7

—

mA

V

DD

= 1.8V

I

SC

—

±22

—

mA

V

DD

= 5.5V

Power Supply
Supply Voltage

V

DD

1.8

—

5.5

V

Quiescent Current per amplifier

I

Q

200

300

400

µA

I

O

 = 0

POR Trip Voltage

V

POR

1.15

—

1.65

V

Electrical Characteristics: Unless otherwise indicated, T

A

 = +25°C, V

DD

 = +1.8V to +5.5V, V

SS

 = GND, V

CM

 = V

DD

/3,

V

OUT

= V

DD

/2, V

L

= V

DD

/2, R

L

 = 20 k

Ω to V

L

, and CS = GND (refer to 

Figure 1-5

 and 

Figure 1-6

).

Set by design and characterization. Due to thermal junction and other effects in the production environment, these parts 
can only be screened in production (except TC

1

; see Appendix B: “Offset Related Test Screens”). 

Figure 2-18

 shows how V

CMR

 changed across temperature for the first three production lots.

Electrical Characteristics: Unless otherwise indicated, T

A

 = +25°C, V

DD

 = +1.8V to +5.5V, V

SS

 = GND, V

CM

 = V

DD

/3, 

V

OUT

= V

DD

/2, V

L

= V

DD

/2, R

L

 = 20 k

Ω to V

L

, C

L

 = 60 pF, and CS = GND (refer to 

 and 

).

Amplifier AC Response
Gain Bandwidth Product 

GBWP

—

1.3

—

MHz

Slew Rate 

SR

—

0.5

—

V/µs

Phase Margin

PM

—

65

—

°

G = +1

Amplifier Noise Response
Input Noise Voltage

E

ni

—

0.79

—

µV

P-P

f = 0.01 Hz to 1 Hz

E

ni

—

2.5

—

µV

P-P

f = 0.1 Hz to 10 Hz

Input Noise Voltage Density

e

ni

—

120

—

nV/

√Hz f < 2.5 kHz

e

ni

—

45

—

nV/

√Hz f = 100 kHz

Input Noise Current Density

i

ni

—

0.6

—

fA/

√Hz

Amplifier Distortion (Note 1)
Intermodulation Distortion (AC)

IMD

—

<1

—

µV

PK

V

CM

 tone = 50 mV

PK 

at 1 kHz, G

N

 = 1, V

DD

 = 1.8V

IMD

—

<1

—

µV

PK

V

CM

 tone = 50 mV

PK 

at 1 kHz, G

N

 = 1, V

DD

 = 5.5V

Amplifier Step Response
Start Up Time

t

STR

—

500

—

µs

V

OS

 within 50 µV of its final value

Offset Correction Settling Time

t

STL

—

300

—

µs

G = +1, V

IN

 step of 2V,

V

OS

 within 50 µV of its final value

Output Overdrive Recovery Time

t

ODR

—

100

—

µs

G = -100, ±0.5V input overdrive to V

DD

/2,

V

IN

 50% point to V

OUT

 90% point (Note 2)

These parameters were characterized using the circuit in 

 and 

 show both an IMD 

tone at DC and a residual tone at1 kHz; all other IMD and clock tones are spread by the randomization circuitry.

t

ODR

 includes some uncertainty due to clock edge timing.