Microchip Technology MA180025 Data Sheet

Page of 450
PIC18F87J90 FAMILY
DS39933D-page 406
 2010 Microchip Technology Inc.
TABLE 28-1:
MEMORY PROGRAMMING REQUIREMENTS    
 
     
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C 
 T
A
 
 +85°C for industrial 
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
Program Flash Memory
D130
E
P
Cell Endurance
10K
E/W -40
C to +85C
D131
V
PR
V
DD
 for Read
V
MIN
3.6
V
V
MIN
 = Minimum operating 
voltage
D132B V
PEW
Voltage for Self-Timed Erase or 
Write operations
V
DD
V
DDCORE
2.35
2.25

3.6
2.7
V
V
ENVREG tied to V
DD
ENVREG tied to V
SS
D133A T
IW
Self-Timed Write Cycle Time
2.8
ms
D133B T
IE
Self-Timed Block Erased Cycle 
Time
33
ms
D134
T
RETD
Characteristic Retention
20
Year Provided no other 
specifications are violated
D135
I
DDP
Supply Current during 
Programming
3
14
mA
D140
T
WE
Writes per Erase Cycle
1
For each physical address
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance 
only and are not tested.