Microchip Technology MCP1256/7/8/9EV Data Sheet
2006-2013 Microchip Technology Inc.
DS21989B-page 3
MCP1256/7/8/9
1.0
ELECTRICAL
CHARACTERISTICS
CHARACTERISTICS
Absolute Maximum Ratings†
Power Supply Voltage, V
IN
...............................................3.8V
Voltage on Any Pin w.r.t. GND ................. -0.3V to (V
IN
+0.3V)
Output Short Circuit Duration ................................continuous
Storage Temperature Range .........................-65°C to +150°C
Ambient Temperature with Power Applied ....-55°C to +125°C
Maximum Junction Temperature ................................. +150°C
ESD protection on all pins
Human Body Model (1.5 k
in Series with 100 pF)2 kV
Machine Model (200 pF, No Series Resistance) .............200V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits apply for V
IN
= 1.8V to 3.6V, SHDN = V
IN
, C
IN
=
C
OUT
=
10 µF,
C
1
=
C
2
=
1 µF, I
OUT
=
10 mA, T
J
= -40°C to +125°C. Typical values are at T
J
= +25°C.
Parameters
Sym
Min
Typ
Max
Unit
s
Conditions
ALL DEVICES
Supply Voltage
V
IN
1.8
—
3.6
V
Output Voltage
V
OUT
—
3.3
—
V
Output Voltage Accuracy
V
OUT
-3.0
±0.5
+3.0
%
I
OUT
= 10 mA to I
OUT(MAX)
Output Current
I
OUT(MAX)
30
—
—
mA
1.8V < V
IN
< 2.0V
70
—
—
mA
2.0V < V
IN
< 2.2V
100
—
—
mA
2.2V < V
IN
< 3.6V
Short Circuit Current
I
SC
—
150
—
mA
V
OUT
= 0V, V
IN
= 1.8V to 3.6V
Power Efficiency
—
84.5
—
%
V
IN
= 1.8V, I
OUT
= 10 mA
—
84.5
—
%
V
IN
= 1.8V, I
OUT
= 50 mA
—
76.4
—
%
V
IN
= 2.0V, I
OUT
= 10 mA
—
80.1
—
%
V
IN
= 2.0V, I
OUT
= 50 mA
—
64.0
—
%
V
IN
= 2.4V, I
OUT
= 10 mA
—
67.1
—
%
V
IN
= 2.4V, I
OUT
= 50 mA
—
67.5
—
%
V
IN
= 2.4V, I
OUT
= 100 mA
—
69.7
—
%
V
IN
= 2.8V, I
OUT
= 10 mA
—
76.0
—
%
V
IN
= 2.8V, I
OUT
= 50 mA
—
76.7
—
%
V
IN
= 2.8V, I
OUT
= 100 mA
—
65.0
—
%
V
IN
= 3.0V, I
OUT
= 10 mA
—
71.0
—
%
V
IN
= 3.0V, I
OUT
= 50 mA
—
71.6
—
%
V
IN
= 3.0V, I
OUT
= 100 mA
Shutdown Input - SHDN
SHDN Input Voltage Low
V
IL(SHDN)
—
—
0.4
V
SHDN Input Voltage High
V
IH(SHDN)
1.4
—
—
V
SHDN Input Leakage
Current
Current
I
LK(SHDN)
—
0.001
0.1
µA
SHDN Quiescent Current
I
Q
—
0.25
2
µA
V
SHDN
= 0V, T
J
= +25°C
Thermal Shutdown
Thermal Shutdown
Threshold
Threshold
T
J
—
160
—
C
Thermal Shutdown
Hysteresis
Hysteresis
T
J(HYS)
—
15
—
C