Microchip Technology SST39LF400A-55-4C-EKE Memory IC TSOP-48 SST39LF400A-55-4C-EKE Data Sheet
Product codes
SST39LF400A-55-4C-EKE
© 2011 Silicon Storage Technology, Inc.
DS25001A
03/11
15
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
Data Sheet
A Microchip Technology Company
Table 11:DC Operating Characteristics –V
DD
= 3.0-3.6V for SST39LF200A/400A/800A and
2.7-3.6V for SST39VF200A/400A/800A
1
Symbol Parameter
Limits
Test Conditions
Min
Max
Units
I
DD
Power Supply Current
Address input=V
ILT
/V
IHT,
at f=1/T
RC
Min, V
DD
=V
DD
Max
Read
2
30
mA
CE#=V
IL
, OE#=WE#=V
IH
, all I/Os
open
Program and Erase
30
mA
CE#=WE#=V
IL
, OE#=V
IH
I
SB
Standby V
DD
Current
20
µA
CE#=V
IHC
, V
DD
=V
DD
Max
I
LI
Input Leakage Current
1
µA
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
I
LO
Output Leakage Current
10
µA
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
IL
Input Low Voltage
0.8
V
DD
=V
DD
Min
V
IH
Input High Voltage
0.7V
DD
V
V
DD
=V
DD
Max
V
IHC
Input High Voltage (CMOS)
V
DD
-0.3
V
V
DD
=V
DD
Max
V
OL
Output Low Voltage
0.2
V
I
OL
=100 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage
V
DD
-0.2
V
I
OH
=-100 µA, V
DD
=V
DD
Min
T11.7 25001
1. Typical conditions for the Active Current shown on page 1 are average values at 25°C (room temperature),
and V
DD
= 3V for VF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
Table 12:Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Power-up to Read Operation
100
µs
T
Power-up to Program/Erase Operation
100
µs
T12.0 25001
Table 13:Capacitance
(T
A
= 25°C, f=1 Mhz, other pins open)
Parameter Description
Test Condition
Maximum
C
I/O
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
I/O Pin Capacitance
V
I/O
= 0V
12 pF
C
IN
Input Capacitance
V
IN
= 0V
6 pF
T13.0 25001
Table 14:Reliability Characteristics
Symbol
Parameter
Minimum Specification
Units
Test Method
N
END
1,2
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would
result in a higher minimum specification.
Endurance
10,000
Cycles
JEDEC Standard A117
T
DR
Data Retention
100
Years
JEDEC Standard A103
I
LTH
Latch Up
100 + I
DD
mA
JEDEC Standard 78
T14.2 25001